Modeling and experiments on diffusion and activation of phosphorus in germanium

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Tsouroutas, P ^a   Tsoukalas, D ^a   Zergioti, I ^a   Cherkashin, N ^b   Claverie, A ^b  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PROFILES; CONVENTIONAL ANNEALING; DOPANT ACTIVATION; DOPANT DIFFUSION; DOPANT LOSS; DOPANT PROFILE; FREE ELECTRON CONCENTRATION; IMPLANTATION DAMAGE; LASER ANNEALING; LASER THERMAL; MASS SPECTROSCOPY; MELTING THRESHOLD; ND : YAG LASERS; OUT-DIFFUSION; P-DIFFUSION; PHOSPHORUS DIFFUSION; PILE-UP; QUADRATIC DEPENDENCE; STRUCTURAL DEFECT; TEMPERATURE RANGE; THERMAL PROCESSING; VAN DER PAUW METHOD;

ANNEALING; DIFFUSION; ELECTRIC RESISTANCE; GERMANIUM; LASERS; MASS SPECTROMETRY; PHOSPHORUS; PULSED LASER APPLICATIONS; TRANSMISSION ELECTRON MICROSCOPY;

NEODYMIUM LASERS;

EID: 67249109061     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3117485     Document Type: Article

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