Impact of isovalent doping on radiation defects in silicon

Journal of Applied Physics

Volumn 114, Issue 11, 2013, Pages

  Londos, C A ^a   Sgourou, E N ^a   Timerkaeva, D ^b   Chroneos, A ^c   Pochet, P ^b   Emtsev, V V ^d  

^a UNIVERSITY OF ATHENS   (Greece)

^b UNIV GRENOBLE ALPES   (France)

^c OPEN UNIVERSITY   (United Kingdom)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON IMPURITIES; CONVERSION RATIO; INTRINSIC DEFECTS; RADIATION DEFECTS; RADIATION INDUCED DEFECTS; REACTION PROCESS; THERMAL EVOLUTION;

DOPING (ADDITIVES); INFRARED SPECTROSCOPY; OXYGEN; POINT DEFECTS; SILICON; VACANCIES;

DEFECTS;

EID: 84887450089     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4821116     Document Type: Article

References (61)

1. R. C., Newman and R., Jones, in, Oxygen in Silicon, Semiconductors and Semimetals, Vol. 42, edited by, F., Shimura, (Academic Press, Orlando, 1994), p. 289.
2. G., Davies and R. C., Newman, in, Handbook on Semiconductors, Materials Properties and Preparations, edited by, T. S., Moss, and, S., Mahajan, (North Holland, Amsterdam, 1994), p. 1557.
3. G. D., Watkins and J. W., Corbett, Phys. Rev., 121, 1001 (1961). 10.1103/PhysRev.121.1001
4. L. C., Kimerling, " Radiation effects in semiconductors, " in, 10P Conf. Ser. No. 31, Bristol/London, edited by, N. B., Urli, and, J. W., Corbett, (1977), p. 221;
5. L. C., Kimerling, M. T., Asom, J. A., Benton, P. J., Drevinscky, and C. E., Caefar, Mater. Sci. Forum, 38-41, 141 (1980).
6. C. A., Londos, Phys. Status Solidi A, 113, 503 (1989); 10.1002/pssa.v113:2
7. C. A., Londos, 92, 609 (1985); 10.1002/pssa.v92:2
8. Jpn. J. Appl. Phys., Part 1, 27, 2089 (1988); 10.1143/JJAP.27.2089
9. Phys. Rev. B, 35, 6295 (1987); 10.1103/PhysRevB.35.6295
10. C. A., Londos, N., Sarlis, L. G., Fytros, and K., Papastergiou, 53, 6900 (1996); 10.1103/PhysRevB.53.6900
11. N. V., Sarlis, C. A., Londos, and L. G., Fytros, J. Appl. Phys., 81, 1645 (1997); 10.1063/1.364020
12. A., Chroneos and C. A., Londos, 107, 093518 (2010); 10.1063/1.3409888
13. H., Wang, A., Chroneos, C. A., Londos, E. N., Sgourou, and U., Schwingensclögl, Appl. Phys. Lett., 103, 052101 (2013). 10.1063/1.4817012
14. J. L., Lindstrom and B. G., Svensson, Mater. Res. Symp. Proc., 59, 45 (1986). 10.1557/PROC-59-45
15. R. C., Newman and A. R., Bean, Radiat. Eff., 8, 189 (1971); 10.1080/00337577108231028
16. C. A., Londos, E. N., Sgourou, A., Chroneos, and V. V., Emtsev, Semicond. Sci. Technol., 26, 105024 (2011); 10.1088/0268-1242/26/10/105024
17. E. N., Sgourou, A., Andrianakis, C. A., Londos, and A., Chroneos, J. Appl. Phys., 113, 113507 (2013). 10.1063/1.4795812
18. H. G., Grimeiss, " Microscopic identification of electronic defects in semiconductors, " in, MRS Symposia Proceedings (Materials Research Society, Pittsbourgh, 1985), Vol. 46, p. 39.
19. S. D., Brotherton and P., Bradley, J. Appl. Phys., 53, 5720 (1982). 10.1063/1.331460
20. A., Khan, M., Yamaguchi, Y., Ohshita, N., Dharmarasu, K., Araki, T., Abe, H., Itoh, T., Ohshima, M., Imaizumi, and S., Matsuda, J. Appl. Phys., 90, 1170 (2001). 10.1063/1.1384855
21. A., Chroneos, C. A., Londos, E. N., Sgourou, and P., Pochet, Appl. Phys. Lett., 99, 241901 (2011). 10.1063/1.3666226
22. A., Brelot and J., Charlemagne, Radiat. Eff., 9, 65 (1971). 10.1080/00337577108242034
23. J., Chen, J., Vanhellemont, E., Simoen, J., Lauwaert, H., Vrielink, J. M., Rafi, H., Ohyama, J., Weber, and D., Yang, Phys. Status Solidi C, 8, 674 (2011). 10.1002/pssc.201000142
24. L. I., Khirunenko, V. I., Shakhovtsov, V. V., Shumov, and V. I., Yashnik, Mater. Sci. Forum, 196-201, 1381 (1995). 10.4028/www.scientific.net/MSF.196- 201.1381
25. C. A., Londos, A., Andrianakis, V., Emtsev, and H., Ohyama, Semicond. Sci. Technol., 24, 075002 (2009). 10.1088/0268-1242/24/7/075002
26. C. A., Londos, A., Andrianakis, V., Emtsev, and H., Ohyama, J. Appl. Phys., 105, 123508 (2009). 10.1063/1.3148293
27. C. A., Londos, D., Aliprantis, E. N., Sgourou, A., Chroneos, and P., Pochet, J. Appl. Phys., 111, 123508 (2012). 10.1063/1.4729573
28. C., Claeys, E., Simoen, V. P., Neimash, A., Kraitchinskii, M., Kras'ko, O., Puzenko, A., Blondeel, and P., Clauws, J. Electrochem. Soc., 148, G738 (2001). 10.1149/1.1417558
29. C. A., Londos, A., Andrianakis, E. N., Sgourou, V., Emtsev, and H., Ohyama, J. Appl. Phys., 107, 093520 (2010). 10.1063/1.3391127
30. C. A., Londos, E. N., Sgourou, and A., Chroneos, J. Appl. Phys., 112, 123517 (2012). 10.1063/1.4770488
31. L., Genovese, A., Neelov, S., Goedecker, T., Deutsch, S. A., Ghasemi, A., Willand, D., Caliste, O., Zilberberg, M., Rayson, A., Bergman, and R., Schneider, J. Chem. Phys., 129, 014109 (2008). 10.1063/1.2949547
32. J. P., Perdew, K., Burke, and M., Ernzerhof, Phys. Rev. Lett., 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
33. L., Genovese, M., Ospici, T., Deutsch, J. F., Mehaut, A., Neelov, and S., Goedecker, J. Chem. Phys., 131, 034103 (2009). 10.1063/1.3166140
34. E., Machado-Charry, L. K., Beland, D., Caliste, L., Genovese, T., Deutsch, N., Mousseau, and P., Pochet, J. Chem. Phys., 135, 034102 (2011). 10.1063/1.3609924
35. M., Krack, Theor. Chem. Acc., 114, 145 (2005). 10.1007/s00214-005-0655-y
36. D., Caliste, P., Pochet, T., Deutsch, and F., Lançon, Phys. Rev. B, 75, 125203 (2007). 10.1103/PhysRevB.75.125203
37. G. D., Watkins, Phys. Rev. B, 12, 4383 (1975). 10.1103/PhysRevB.12.4383
38. V. V., Ahmetov and V. V., Bolotov, Radiat. Eff., 52, 149 (1980). 10.1080/00337578008210027
39. G., Davies, E. C., lightwlers, R. C., Newman, and A. S., Oates, Semicond. Sci. Technol., 2, 524 (1987). 10.1088/0268-1242/2/8/009
40. C. A., Londos, A., Andrianakis, V., Emtsev, G. A., Oganesyan, and H., Ohyama, Mater. Sci. Eng. B, 154-155, 133 (2008). 10.1016/j.mseb.2008.09.043
41. B. G., Svensson and J. A., Lindstrom, Phys. Rev. B, 34, 8709 (1986). 10.1103/PhysRevB.34.8709
42. C. A., Londos, N. V., Sarlis, and L. G., Fytros, Phys. Status Solidi A, 163, 325 (1997). 10.1002/1521-396X(199710)163:2<325::AID-PSSA325>3.0.CO;2- 1
43. E. N., Sgourou, D., Timerkaeva, C. A., Londos, D., Aliprantis, A., Chroneos, D., Caliste, and P., Pochet, J. Appl. Phys., 113, 113506 (2013); 10.1063/1.4795510
44. 113, 239901 (2013). 10.1063/1.4811367
45. P., Pochet and D., Caliste, Mater. Sci. Semicond. Process., 15, 675 (2012). 10.1016/j.mssp.2012.05.011
46. C. A., Londos, M. J., Bins, A. R., Brown, S. A., McQuaid, and R. C., Newman, Appl. Phys. Lett., 62, 1525 (1993). 10.1063/1.108628
47. B. G., Svensson and J. L., Lindstrom, Appl. Phys. Lett., 47, 841 (1985). 10.1063/1.96003
48. M. L., David, E., Simoen, C., Clays, V. B., Neimash, M., Kra'sko, A., Kraitchinscii, V., Voytovych, V., Tishchenko and J. F., Barbot, in, The Proc. High Purity Silicon VIII, The Electrochem. Soc. Ser. Proc. (2004), Vol. 2004-2005, p. 395.
49. L. I., Khirunenko, O. O., Kobzar, Yu. V., Pomozov, M. G., Sosnin, M. O., Tripachko, N. V., Abrosimov, and H., Riemann, Physica B, 340-342, 546 (2003). 10.1016/j.physb.2003.09.138
50. E. V., Lavrov, M., Fanciulli, M., Kaukonen, R., Jones, and P. R., Briddon, Phys. Rev. B, 64, 125212 (2001). 10.1103/PhysRevB.64.125212
51. A., Chroneos, C. A., Londos, and E. N., Sgourou, J. Appl. Phys., 110, 093507 (2011). 10.1063/1.3658261
52. C. A., Londos, A., Andrianakis, V., Emtsev, G. A., Oganesyan, and H., Ohyama, Physica B, 404, 4693 (2009). 10.1016/j.physb.2009.08.145
53. N., Inoue, H., Ohyama, Y., Goto, and T., Sugiyama, Physica B, 401-402, 477 (2007). 10.1016/j.physb.2007.09.003
54. C. A., Londos, E. N., Sgourou, and A., Chroneos, J. Mater. Sci: Mater. Electron., 24, 1696 (2013). 10.1007/s10854-012-0998-9
55. C. N., Koumelis, G. E., Zardas, C. A., Londos, and D. K., Leventouri, Acta Cryst. A, 32, 306 (1976); 10.1107/S0567739476000661
56. A., Misiuk, J., Bak-Misiuk, A., Barez, A., Romano-Rodriguez, I. V., Antonova, V. P., Popov, C. A., Londos, and J., Jun, Int. J. Hydrogen Energy, 26, 483 (2001); 10.1016/S0360-3199(00)00094-X
57. V. V., Emtsev, C. A. J., Ammerlaan, V. V., Emtsev, G. A., Oganesyan, B. A., Andreev, D. I., Kuritsyn, A., Misiuk, B., Surma, and C. A., Londos, Phys. Status Solidi B, 235, 75 (2003); 10.1002/pssb.v235:1
58. H., Tahini, A., Chroneos, R. W., Grimes, U., Schwingensclögl, and A., Dimoulas, J. Phys.: Condens. Matter, 24, 195802 (2012); 10.1088/0953-8984/ 24/19/195802
59. A., Chroneos, C., Jiang, R. W., Grimes, U., Schwingensclögl, and H., Bracht, Appl. Phys. Lett., 94, 252104 (2009); 10.1063/1.3159468
60. A., Chroneos, H., Bracht, R. W., Grimes, and B. P., Uberuaga, 92, 172103 (2008); 10.1063/1.2918842
61. A., Chroneos, J. Appl. Phys., 107, 076102 (2010). 10.1063/1.3361115