Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Semiconductor Science and Technology

Volumn 30, Issue 2, 2015, Pages

  Yeon Kwon, Jang ^a   Kyeong Jeong, Jae ^b  

^a Yonsei University   (South Korea)

^b Inha University   (South Korea)

Author keywords

field effect transistors; high performance; metal oxide

Indexed keywords

FIELD EFFECT TRANSISTORS; FIELD EMISSION DISPLAYS; FLAT PANEL DISPLAYS; FLEXIBLE DISPLAYS; LIQUID CRYSTAL DISPLAYS; OHMIC CONTACTS; ORGANIC LIGHT EMITTING DIODES (OLED); STRATEGIC MATERIALS; THIN FILM CIRCUITS; THIN FILMS; TRANSITION METAL OXIDES; TRANSITION METALS; ZINC COMPOUNDS;

ADVANCED ARCHITECTURE; FIELD-EFFECT MOBILITIES; HIGH PERFORMANCE; HIGH-QUALITY IMAGING; LOW COST FABRICATION; METAL OXIDES; STRATEGIC APPROACHES; THIN FILM TRANSISTORS (TFTS);

THIN FILM TRANSISTORS;

EID: 84921487006     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/30/2/024002     Document Type: Review

References (100)

1. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano H and Hosono H 2004 Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 432 488
2. Kamiya T, Nomura K and Hosono H 2010 Present status of amorphous in-Ga-Zn-O thin-film transistors Sci. Technol. Adv. Mater. 11 044305
3. Hosono H 2006 Ionic amorphous oxide semiconductors: material design, carrier transport J. Non-Cryst. Solids 352 851
4. Martins R, Barquinha P, Pereira L, Ferreira I and Fortunato E 2007 Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors Appl. Phys. A 89 37
5. Lee H, Yoo J, Kim C, Kang I and Kanicki K 2008 Hexagonal a-Si: H TFTs: a new advanced technology for flat-panel displays IEEE Trans. Electron. Devices 55 329
6. Indluru A, Venugopal S M, Allee D R and Alford T L 2011 Effect of anneal time on the enhanced performance of a-Si:H TFTs for future display technology J. Disp. Technol. 7 306
7. Barquinha P, Pereira L, Goncalves G, Martins R and Fortunato E 2008 The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs Electrochem. Solid-State Lett. 11 H248
8. Olziersky A, Barquinha P, Vila A, Magana C, Fortunato E, Morante J R and Martins R 2011 Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors. Mater. Chem. Phys. 131 512
9. Jeong J K, Jeong J H, Yang H W, Park J, Mo Y G and Kim H D 2008 High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel Appl. Phys. Lett. 91 113505
10. Choi B D 2009 Line-time extension driving method with image quality enhancement for LCD monitors and TVs IEEE Trans. Consum. Electron. 50 2257
11. Jeong J K 2013 Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays J. Mater. Res. 28 2071
12. Fortunato E, Barquinha P and Martins R 2012 Oxide semiconductor thin-film transistors: a review of recent advances Adv. Mater. 24 2945
13. Park J S, Maeng W J, Kim H S and Park J S 2012 Review of recent developments in amorphous oxide semiconductor thin-film transistor devices Thin Solid Films 520 1679
14. Jeong J K 2011 The status and perspectives of metal oxide thin film transistors for active matrix displays Semicond. Sci. Technol. 26 034008
15. Kim S J, Yoon S and Kim H J 2014 Review of solution-processed oxide thin-film transistors Japan. J. Appl. Phys. 53 02BA02
16. Tahar R B H, Ban T, Ohya Y and Takahashi Y 1998 Tin doped indium oxide thin films: electrical properties J. Appl. Phys. 83 2631
17. Ellmer K 2001 Resistivity of polycrystalline zinc oxide films: current status and physical limit J. Phys. D: Appl. Phys. 34 3097
18. Van de Walle C G 2000 Hydrogen as a cause of doping in zinc oxide Phys. Rev. Lett. 85 1012
19. Bellingham J R, Philips W A and Adkins C J 1991 Amorphous indium oxide Thin Solid Films 195 23
20. Hosono H 2006 Ionic amorphous oxide semiconductor: material design, carrier transport, and device application J. Non-Cryst. Solids 352 851
21. Hoffman R L, Norris B J and Wager J F 2003 ZnO-based transparent thin-film transistors Appl. Phys. Lett. 82 733
22. Nishii J et al 2003 Japan. J. Appl. Phys. 42 L347
23. Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Goncalves A M F, Marques A J S, Martins R F P and Pereira L M N 2004 Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature Appl. Phys. Lett. 85 2541
24. Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Goncalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Fully transparent ZnO thin-film transistor produced at room temperature Adv. Mater. 17 590
25. Morris B J, Anderson J, Wager J F and Keszler D F 2003 Spin-coated zinc oxide transparent transistors J. Phys. D: Appl. Phys. 36 L105
26. Hwang C S, Park S H K, Oh H, Ryu M K, Cho K I and Yoon S M 2014 Vertical channel ZnO thin-film transistors using an atomic layer deposition method IEEE Electron. Device Lett. 35 360
27. Yun H J, Kim Y S, Jeong K S, Kim Y M, Yang S D, Lee H D and Lee G W 2014 Analysis of stability improvement in ZnO thin film transistor with dual-gate structure under negative bias stress Japan. J. Appl. Phys. 53 04EF11
28. Nomura K, Ohta H, Ueda K, Kamiya T, Hirano M and Hosono H 2003 Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor Science 300 1269
29. Wang L, Yoon M, Lu G, Yang Y, Facchetti A and Marks T J 2006 High-performance transparent inorganic/organic hybrid thin-film n-type transistors Nat. Mater. 5 893
30. Minami T, Kakumu T and Takata S 1996 Preparation of transparent and conductive In2O3-ZnO films by radio frequency magnetron sputtering J. Vac. Sci. Technol. A 14 1706
31. Yaglioglu B, Yeom H Y, Beresford R and Paine D C 2006 High-mobility amorphous In2O3-10 wt%ZnO thin film transistors Appl. Phys. Lett. 89 062103
32. Song J I, Park J S, Kim H, Heo Y W, Lee J H, Kim J J, Kim G M and Choi B D 2007 Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature Appl. Phys. Lett. 90 022106
33. Banger K K, Yamashita Y, Mori K, Peterson R L, Leedham T, Rickard J and Sirringhaus H 2011 Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process Nat. Mater. 10 45
34. Fortunato E, Barquinha P, Pimentel A, Pereira L, Goncalves G and Martins R 2007 Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2 Vs-1 Phys. Status Solid RRL 1 R34
35. Park S Y et al 2013 Improvement in photo-bias stability of high-mobility indium zinc oxide thin-film transistors by oxygen high-pressure annealing IEEE Electron. Device Lett. 34 894
36. Oh S J, Han C J, Kim J W, Kim Y H, Park S K, Han J I, Kang J W and Oh M S 2011 Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment 14 H354 Electrochem. Solid-State Lett.
37. Heo J Y, Kim S B and Gorden R G 2012 Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors Appl. Phys. Lett. 101 113507
38. Cheong W S, Shin J H, Chung S M, Hwang C S, Lee J M and Lee J H 2012 Current stress induced electrical instability in transparent zinc tin oxide thin-film transistors J. Nanosci. Nanotechnology 12 3421
39. Kim Y H, Han J I and Park S K 2012 Effect of zinc/tin composition ratio on the operational stability of solution-processed zinc-tin-oxide thin-film transistors IEEE Electron. Device Lett. 33 50
40. Zhao Y, Duan L, Dong G, Zhang D, Qiao J, Wang L and Qiu Y 2012 High-performance transistors based on zinc tin oxides by single spin-coating process Langmuir 29 151
41. Rajachidambaram M S, Pandey A, Vilayurganapathy S, Nachimuthu P, Thevuthasan S and Herman G S 2013 Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation Appl. Phys. Lett. 103 171602
42. Ha T J and Dodabalapur A 2013 Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications Appl. Phys. Lett. 102 123506
43. Triska J, Conley J F, Presley R and Wager J F 2010 Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics. J. Vac. Sci. Technol. 28 C5I1
44. Kamiya T, Nomura K and Hosono H 2009 Electronic structures above mobility edges in crystalline and amorphous In-Ga-Zn-O: percolation conduction examined by analytical model J. Disp. Technol. 5 462
45. Kim C J et al 2009 Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors Appl. Phys. Lett. 95 252103
46. Kwon J Y et al 2010 The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor Appl. Phys. Lett. 97 18350
47. Park J S et al 2010 High-performance and stable transparent Hf-In-Zn-O thin-film transistors with a double-etch-stopper layer IEEE Electron. Device Lett. 31 1248
48. Park J S, Kim K S, Par Y G, Mo Y G, Kim H D and Jeong J K 2009 Novel ZrInZnO thin-film transistor with excellent stability Adv. Mater. 21 329
49. Chong H Y, Han K W, No Y S and Kim T W 2011 Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zincoxide thin-film transistors fabricated by using a solution process Appl. Phys. Lett. 99 161908
50. Do J C, Ahn C H, Cho H K and Lee H S 2012 Effect of Ti addition on the characteristics of titanium-zinc-tin-oxide thin-film transistors film transistors fabricated via a solution process J. Phys. D: Appl. Phys. 45 225103
51. Park S M, Lee D H, Lim Y S, Kim D K and Yi M S 2013 Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistor Microelectron. Eng. 109 189
52. Cho D H, Yang S, Byun C, Shin J, Ryu M K, Park S H K, Hwang C S, Chung S M, Cheong W S, Yoon S M and Chu H 2008 Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature Appl. Phys. Lett. 93 142111
53. Lan L, Xiong N, Xiao P, Li M, Xu H, Yao R, Wen S and Peng J 2013 Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5 Appl. Phys. Lett. 102 242102
54. Banger K K, Peterson R L, Mori K, Yamashita Y, Leedham T and Sirringhaus H 2013 High performance, low temperature solution-processed barium and strontium doped oxide thin film transistors Chem. Mater. 26 1195
55. Choi Y R, Kim G H, Jeong W H, Bae J H, Kim H J, Hong J M and Yu J W 2010 Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors Appl. Phys. Lett. 97 162102
56. Kim G H, Jeong W H, Ahn B D, Shin H S, Kim H J, Ryu M K, Park K B, Seon J B and Lee S Y 2010 Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors Appl. Phys. Lett. 96 163506
57. Park J C, Kim S W, Kim C J and Lee H N 2012 Low-temperature fabrication and characteristics of lanthanum indium zinc oxide thin-film transistors IEEE Electron. Device Lett. 33 685
58. Park J C, Kim S W, Kim C J and Lee H N 2012 The effects of gadolinium incorporation into indium-zinc-oxide thin-film transistors IEEE Electron. Device Lett. 33 809
59. Ryu M K, Yang S, Park S H K, Hwang C S and Jeong J K 2009 High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: combinatorial approach Appl. Phys. Lett. 95 072104
60. Saji K J, Jayaraj M K, Nomura K, Kamiya T and Hosono H 2008 Optical and carrier transport properties of cosputtered Zn-In-Sn-O films and their application to TFTs J. Electrochem. Soc. 155 H390
61. Song J H, Kim K S, Mo Y G, Choi R and Jeong J K 2014 Achieving high field-effect mobility exceeding 50 cm2 Vs-1 in In-Zn-Sn-O thin-film transistor IEEE Electron. Device Lett. 35 853
62. Ye Y, Lim R and White J M 2009 High mobility amorphous zinc oxynitride semiconductor material for thin film transistors J. Appl. Phys. 106 074512
63. Kim H S et al 2013 Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors Sci. Rep. 3 1459
64. Kim S I, Kim C J, Park J C, Song I, Kim S W, Yin H, Lee E, Lee J C and Park Y 2008 High performance oxide thin film transistors with double active layers IEDM Tech. Dig. 1 73-6
65. Chong E, Jeon Y W, Chun Y S, Kim D H and Lee S Y 2011 Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer Thin Solid Films 519 4347
66. Park J C, Kim S, Kim S, Kim C, Song I, Park Y, Jung U, Kim D H and Lee J 2010 Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers Adv. Mater. 22 5512
67. Kim J et al 2011 Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface Appl. Phys. Lett. 99 122102
68. Kim H et al 2012 Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability ACS Appl. Mater. Interfaces 4 5416
69. Jung H Y, Kang Y, Hwang A Y, Lee C K, Han S, Kim D, Bae J, Shin W and Jeong J K 2014 Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor Sci. Rep. 4 3765
70. Wang S L, Yu J W, Yeh P C, Kuo H W, Peng L H, Fedyanin A A, Mishina E D and Sigov A S 2012 High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures Appl. Phys. Lett. 100 063506
71. Ahn C H, Senthil K, Cho H K and Lee S Y 2013 Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors Sci. Rep. 3 2737
72. Liu X, Wang C, Cai B, Xiao X, Guo S, Fan Z, Li J, Duan X and Liao L 2012 Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistor Nano Lett. 12 3596
73. Zan H W, Tsai W W, Chen C H and Tsai C C 2011 Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors Adv. Mater. 23 4237
74. Zan H, Yeh c.c., Meng H F, Tsai c.c. and Chen L H 2012 Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer Adv. Mater. 24 3509
75. Olziersky A, Barquinha P, Vila A, Pereira L, Goncalves G, Fortunato E, Martins R and Morante J R 2010 Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors J. Appl. Phys. 108 064505
76. Jeong J K, Yang H W, Jeong J H, Mo Y G and Kim H D 2008 Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors Appl. Phys. Lett. 93 123508
77. Kwon J Y et al 2008 Bottom-gate gallium indium zinc oxide thin-film transistor array for high resolution AMOLED display IEEE Electron. Device Lett. 29 1309
78. Park J et al 2008 High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation Appl. Phys. Lett. 93 053505
79. Park J C, Ahn S E and Lee H N 2013 High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel ACS Appl. Mater. Interfaces 5 12262
80. Ryu S H, Park Y C, Mativenga M, Kang D H and Jin J 2012 Amorphous-InGaZnO4 thin-film transistors with damage-free back channel wet-etch process ECS Solid State Lett. 1 Q17
81. Xu H., Lan L, Xu M, Zou J, Wang L, Wang D and Peng J 2011 High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique Appl. Phys. Lett. 99 253501
82. Luo D, Li M, Xu M, Pang J, Zhang Y, Wang L, Tao H, Wang L, Zou J and Peng J 2014 Highly stable amorphous indium-zinc-oxide thin-film transistors with back-channel wet-etch process Physica Status Solidi RRL 8 1176
83. Luo D, Xu H., Li M, Tao H, Wang L, Peng J and Xu M 2014 Effect of etching residue on positive shift of threshold voltage in amorphous inium-zinc-oxide thin-film transistors based on back-channel-etch structure IEEE Trans. Electron. Device Lett. 61 92
84. Kwon J et al 2010 The impact of device configuration on the photon-enhanced negative bias thermal instability of GaInZnO thin film transistors Electrochem. Solid-State Lett. 13 H213
85. Suzuki K 1987 Compensative addressing for switching distortion in an a-Si TFT LCD Proc. Eurodisp. 107
86. Morosawa N, Ohshima Y, Morooka M, Arai T and Sasaoka T 2011 A novel self-aligned top-gate oxide TFT for AM-OLED displays Soc. Inf. Disp. Int. Dig. Tech. Pap. 42 479
87. Kim M, Jeong J H, Lee H J, Ahn T K, Shin H S, Park J S, Jeong J K, Mo Y G and Kim H D 2007 High mobility bottom gate InGaZnO thin-film transistors with SiOx etch stopper Appl. Phys. Lett. 90 4212114
88. Jeong J K, Chung H J, Mo Y G and Kim H D 2008 Comprehensive studies on the transport mechanism of amorphous InGaZnO transistors J. Electrochem. Soc. 155 H873
89. Wu C H, Hsieh H H, Chien C W and Wu c.c. 2009 Self-aligned top-gate coplanar In-Ga-Zn-O thin-film transistors J. Disp. Technol. 5 515
90. Kang D H, Kang I, Ryu S H and Jang J 2011 Self-aligned coplanar a-IGZO TFTs and application to high-speed circuit IEEE Electron. Devices Lett. 32 1385
91. Kim W, Park J C, Kim C J, Song I H, Kim S I, Park S H, Yin H, Lee H I, Lee E H and Park Y S 2009 Source/drain formation of self-aligned top-gate amorphous GaInZnO thin-film transistors by NH3 plasma treatment IEEE Electron. Device Lett. 30 374
92. Park J C, Lee H N and Im S 2013 Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-Si transistor performance ACS Appl. Mater. Interfaces 5 6990
93. Bae J U, Kim D H, Kim K, Jung K, Shin W, Kang I and Yeo S 2013 Development of oxide TFT's structures Soc. Inf. Disp. Int. Dig. Tech. Pap. 44 89
94. Jeong J, Lee G J, Kim J and Choi B 2012 Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes Appl. Phys. Lett. 100 112109
95. Yim J, Jung S, Yeon H, Kwon J., Lee Y, Lee J and Joo Y 2012 Effect of metal electrode on the electrical performance of amorphous In-Ga-Zn-O thin film transistor Japan. J. Appl. Phys. 51 011401
96. Tai Y, Chiu H and Chou L 2012 The deterioration of a-IGZO TFTs owing to the copper diffusion after the process of the source/drain metal formation J. Electrochem. Soc. 159 J200
97. Kanicki J 1988 Contact resistance to undoped and phosphorus-doped hydrogenated amorphous silicon films Appl. Phys. Lett. 53 1943
98. Lee C, Park S Y, Jung H Y, Lee C, Son B, Kim H J, Lee Y, Joo Y and Jeong J K 2013 High performance Zn-Sn-O thin film transistors with Cu source/drain electrode Phys. Status Solid RRL 7 485
99. Yun P S and Koike J 2011 Metal reaction doping and ohmic contact with Cu-Mn electrode on amorphous In-Ga-Zn-O semiconductor J. Electrochem. Soc. 158 H1034
100. Hino A, Maeda T, Morita S and Kugimiya T 2012 Facilitation of the four-mask process by the double-layered Ti/Si barrier metal for oxide semiconductor TFTs J. Inf. Disp. 13 61