Highly stable amorphous indium-zinc-oxide thin-film transistors with back-channel wet-etch process

Physica Status Solidi - Rapid Research Letters

Volumn 8, Issue 2, 2014, Pages 176-181

  Luo, Dongxiang ^a,b   Li, Min ^a,b   Xu, Miao ^a   Pang, Jiawei ^c   Zhang, Yanli ^c   Wang, Lang ^c   Tao, Hong ^a   Wang, Lei ^a,b   Zou, Jianhua ^a   Peng, Junbiao ^a,b,c  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^b South China University of Technology   (China)

^c Guangzhou New Vision Optoelectronic Co Ltd   (China)

Author keywords

Amorphous materials; Etching; Indium zinc oxide; Thin film transistors

Indexed keywords

EID: 84894047094     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201308247     Document Type: Article

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