Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5

Applied Physics Letters

Volumn 102, Issue 24, 2013, Pages

  Lan, Linfeng ^a   Xiong, Nana ^a   Xiao, Peng ^a   Li, Min ^a   Xu, Hua ^a   Yao, Rihui ^a   Wen, Shangsheng ^a   Peng, Junbiao ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); CHANNEL LAYERS; LIGHT ILLUMINATION; POSITIVE GATE BIAS; SUBTHRESHOLD SWING; THERMAL-ANNEALING; THIN-FILM TRANSISTOR (TFTS); WIDE BAND GAP;

ENERGY GAP; SEMICONDUCTING ORGANIC COMPOUNDS; TANTALUM OXIDES;

THIN FILM TRANSISTORS;

EID: 84879820796     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811416     Document Type: Article

References (21)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004). 10.1038/nature03090
2. A. Suresh and J. F. Mutha, Appl. Phys. Lett. 92, 033502 (2008). 10.1063/1.2824758
3. P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato, J. Non-Cryst. Solids 352, 1756-1760 (2006). 10.1016/j.jnoncrysol. 2006.01.068
4. W. B. Jacksona, R. L. Hoffman, and G. S. Herman, Appl. Phys. Lett. 87, 193503 (2005). 10.1063/1.2120895
5. M. Li, L. Lan, M. Xu, L. Wang, H. Xu, D. Luo, J. Zou, H. Tao, R. Yao, and J. Peng, J. Phys. D: Appl. Phys. 44, 455102 (2011). 10.1088/0022-3727/44/45/ 455102
6. J. K. Jeong, H. W. Yang, J. H. Jeong, Y.-G. Mo, and H. D. Kim, Appl. Phys. Lett. 93, 123508 (2008). 10.1063/1.2990657
7. R. B. M. Cross and M. M. De Souza, Appl. Phys. Lett. 89, 263513 (2006). 10.1063/1.2425020
8. J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 92, 072104 (2008). 10.1063/1.2838380
9. M. Li, L. Lan, M. Xu, H. Xu, D. Luo, N. Xiong, and J. Peng, Jpn. J. Appl. Phys. 51, 076501 (2012). 10.1143/JJAP.51.076501
10. S. Lee and D. C. Paine, Appl. Phys. Lett. 102, 052101 (2013). 10.1063/1.4790187
11. S. Lany, A. Zakutayev, T. O. Mason, J. F. Wager, K. R. Poeppelmeier, J. D. Perkins, J. J. Berry, D. S. Ginley, and A. Zunger, Phys. Rev. Lett. 108, 016802 (2012). 10.1103/PhysRevLett.108.016802
12. A. U. Adler, T. C. Yeh, D. B. Buchholz, R. P. H. Chang, and T. O. Mason, Appl. Phys. Lett. 102, 122103 (2013). 10.1063/1.4796119
13. T. Kamiya, K. Nomura, and H. Hosono, Sci. Technol. Adv. Mater. 11, 044305 (2010). 10.1088/1468-6996/11/4/044305
14. T. Fung, C. Chuang, C. Chen, K. Abe, H. Kumomi, and J. Kanicki, AM-FPD'08 Dig. Tech. Paper 2008, 251.
15. M. Fuji, Y. Uraoka, T. Fuyuki, J. Jung, and J. Kwon, Jpn. J. Appl. Phys. 48, 04C091 (2009). 10.1143/JJAP.48.04C091
16. S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Horita, Y. Ishikawa, and Y. Uraoka, Appl. Phys. Lett. 102, 053506 (2013). 10.1063/1.4790619
17. H.-W. Park, B.-K. Kim, J.-S. Park, and K.-B. Chung, Appl. Phys. Lett. 102, 102102 (2013). 10.1063/1.4794941
18. D. Luo, L. Lan, M. Xu, H. Xu, M. Li, J. Zou, H. Tao, L. Wang, and J. Peng, Phys. Status Solidi (RRL) 6, 403 (2012). 10.1002/pssr.201206303
19. H. Xu, L. Lan, M. Xu, J. Zou, L. Wang, D. Wang, and J. Peng, Appl. Phys. Lett. 99, 253501 (2011). 10.1063/1.3670336
20. T. Morikawa, S. Saeki, T. Suzuki, T. Kajino, and T. Motohiro, Appl. Phys. Lett. 96, 142111 (2010). 10.1063/1.3386532
21. W. Chun, A. Ishikawa, H. Fujisawa, T. Takata, J. N. Kondo, M. Hara, M. Kawai, Y. Matsumoto, and K. Domen, J. Phys. Chem. B 107, 1798 (2003). 10.1021/jp027593f