Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1385-1387

  Kang, Dong Han ^a   Kang, In ^a   Ryu, Sang Hyun ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); coplanar; ring oscillator (RO); self aligned process; thin film transistor (TFT)

Indexed keywords

COPLANAR; FIELD-EFFECT MOBILITIES; GATE VOLTAGE SWING; HIGH-SPEED CIRCUITS; PARASITIC RESISTANCES; PROPAGATION DELAY TIME; RING OSCILLATOR; SELF-ALIGNED; SELF-ALIGNED PROCESS; SUPPLY VOLTAGES; TOTAL RESISTANCE;

AMORPHOUS FILMS; GALLIUM; INDIUM; THIN FILM CIRCUITS; ZINC;

THIN FILM TRANSISTORS;

EID: 80053563935     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2161568     Document Type: Article

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