SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 9, 2011, Pages

Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

(8) Jun Oh, Sang a,b Jong Han, Chul a Kim, Ji Wan a Kim, Yong Hoon a Kyu Park, Sung c Han, Jeong In d Won Kang, Jung b Suk Oh, Min a

a Korea Electronic Technology Institute (KETI) (South Korea)

b Dankook University (South Korea)

c Chonbuk National University (South Korea)

d Dongguk University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; ATMOSPHERIC PLASMA TREATMENTS; AVERAGE FIELD; BACK CHANNELS; ELECTRICAL CHARACTERISTIC; NON-VACUUM; PLASMA TREATMENT; SUBTHRESHOLD SWING; ZINC TIN OXIDE;

ELECTRIC PROPERTIES; PLASMA APPLICATIONS; PLASMA DIAGNOSTICS; PLASMAS; THIN FILM DEVICES; TIN; TIN OXIDES; ZINC;

THIN FILM TRANSISTORS;

EID: 79960235292 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3597660 Document Type: Article

Times cited : (15)

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