Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Applied Physics Letters

Volumn 85, Issue 13, 2004, Pages 2541-2543

  Fortunato, Elvira M C ^a   Barquinha, Pedro M C ^a   Pimentel, Ana C M B G ^a   Gonçalves, Alexandra M F ^a   Marques, António J S ^a   Martins, Rodrigo F P ^a   Pereira, Luis M N ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; HIGH TEMPERATURE EFFECTS; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; OPTOELECTRONIC DEVICES; SINGLE CRYSTALS; SUPERLATTICES; ZINC OXIDE;

BOTTOM GATE CONFIGURATION; GLASS SUBSTRATE; HIGH MOBILITY; ROOM TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 7544247006     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790587     Document Type: Article

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