The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

Applied Physics Letters

Volumn 97, Issue 18, 2010, Pages

  Kwon, Jang Yeon ^a   Jung, Ji Sim ^a   Son, Kyoung Seok ^a   Lee, Kwang Hee ^a   Park, Joon Seok ^a   Kim, Tae Sang ^a   Park, Jin Seong ^b   Choi, Rino ^c   Jeong, Jae Kyeong ^c   Koo, Bonwon ^a   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Dankook University   (South Korea)

^c Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS INSTABILITY; DEGRADATION MODEL; GATED DEVICES; HOLE CARRIERS; STRESS CONDITION;

GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; SILICON NITRIDE; THIN FILM TRANSISTORS; ZINC;

DIELECTRIC MATERIALS;

EID: 78649291990     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3513400     Document Type: Article

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