High-mobility amorphous in 2O 3-10 wt %ZnO thin film transistors

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Yaglioglu, B ^a   Yeom, H Y ^a   Beresford, R ^a   Paine, D C ^a  

^a Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DC MAGNETRON SPUTTERING; DRAIN LAYERS; FIELD EFFECT DEVICES; SATURATION MOBILITY;

AMORPHOUS MATERIALS; CARRIER CONCENTRATION; CARRIER MOBILITY; GATES (TRANSISTOR); MAGNETRON SPUTTERING; METALLIZING; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 33747105549     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335372     Document Type: Article

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