High-performance transistors based on zinc tin oxides by single spin-coating process

Langmuir

Volumn 29, Issue 1, 2013, Pages 151-157

  Zhao, Yunlong ^a   Duan, Lian ^a   Dong, Guifang ^a   Zhang, Deqiang ^a   Qiao, Juan ^a   Wang, Liduo ^a   Qiu, Yong ^a  

^a Tsinghua University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

2-METHOXYETHANOL; ALUMINUM OXIDES; BOTTOM-CONTACT; CURRENT RATIOS; GATE INSULATOR; GROWN FROM SOLUTIONS; HIGH MOBILITY; NONHOMOGENEITY; SATURATION REGION; SINGLE LAYER; SINGLE SPIN-COATING; SOLUTION-PROCESSED; SURFACE CRYSTALLIZATION; THRESHOLD GATE VOLTAGE; ZINC ACETATE; ZINC TIN OXIDE; ZINC-TIN-OXIDE (ZTO);

SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD LOGIC; TIN; ZINC; ZINC COMPOUNDS;

TIN OXIDES;

EID: 84872117419     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la304581c     Document Type: Article

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