Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

Applied Physics Letters

Volumn 90, Issue 2, 2007, Pages

  Song, Ju Il ^a   Park, Jae Soung ^a   Kim, Howoon ^a   Heo, Young Woo ^a   Lee, Joon Hyung ^a   Kim, Jeong Joo ^a   Kim, G M ^a   Choi, Byeong Dae ^b  

^a Kyungpook National University   (South Korea)

^b Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; INDIUM COMPOUNDS; OPACITY; PARTIAL PRESSURE; THRESHOLD VOLTAGE; ZINC OXIDE;

GATE-SOURCE-DRAIN; INDIUM ZINC OXIDE; ROOM TEMPERATURE; SATURATION MOBILITY;

THIN FILM TRANSISTORS;

EID: 33846188498     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430917     Document Type: Article

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