Effect of anneal time on the enhanced performance of a-Si:H TFTs for future display technology

IEEE/OSA Journal of Display Technology

Volumn 7, Issue 6, 2011, Pages 306-310

  Indluru, A ^a   Venugopal, S M ^b   Allee, D R ^a,b   Alford, T L ^a,b  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Flexible electronics; low temperature annealing; thin film transistors (TFTs)

Indexed keywords

A-SI:H; ANNEAL TIME; CONTROLLING DEVICES; DISPLAY APPLICATION; DISPLAY TECHNOLOGIES; ENHANCED PERFORMANCE; FLAT PANEL; FLEXIBLE SENSOR; FLEXIBLE SUBSTRATE; HOLE TRANSFER; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LOW TEMPERATURE ANNEALING; NEGATIVE GATE; OFF-CURRENT; ORDERS OF MAGNITUDE; POLYETHYLENE NAPHTHALATE; POWER-LAW TIME DEPENDENCES; RESEARCH EFFORTS; STRESS TIME; SUBTHRESHOLD;

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; FLAT PANEL DISPLAYS; FLEXIBLE DISPLAYS; LIQUID CRYSTAL DISPLAYS;

THIN FILM TRANSISTORS;

EID: 79955613242     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2010.2063695     Document Type: Article

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