Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer

Thin Solid Films

Volumn 519, Issue 13, 2011, Pages 4347-4350

  Chong, Eugene ^a,b   Jeon, Yong Woo ^c   Chun, Yoon Soo ^a   Kim, Dae Hwan ^c   Lee, Sang Yeol ^a,b  

^a Korea Institute of Science and Technology   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Kookmin University   (South Korea)

Author keywords

Buried channel structure; Density of state; Density of State; Ga doped Zinc Oxide; Interface; Thin Film Transistor; Transmission Electron Microscopy; Zn rich layer

Indexed keywords

BURIED CHANNELS; DENSITY OF STATE; GA-DOPED ZINC OXIDE; INTERFACE; ZN-RICH LAYER;

AMORPHOUS FILMS; CARRIER CONCENTRATION; FIELD EFFECT TRANSISTORS; GALLIUM; INDIUM; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79954442544     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.02.033     Document Type: Article

References (21)

1. J.F. Wager Sci. 300 23 2003 1245
2. J.S. Park, K.S. Kim, Y.G. Park, Y.G. Mo, H.D. Kim, and J.K. Jeong Adv. Mater. 21 2009 329
3. A.I. Ievtushenko, V.A. Karpyna, V.I. Lazorenko, G.V. Lashkarev, V.D. Khranovskyy, V.A. Baturin, O.Y. Karpenko, M.M. Lunika, K.A. Avramenko, V.V. Strelchuk, and O.M. Kutsay Thin Solid Films 518 2010 4529
4. G. Verma, A. Slaoui, S. Talwar, and T.W. Sigmon IEEE Electron Devices Lett. 16 1 1995 14
5. T. Kamiya, K. Nomura, and H. Hosono J. Display Technol. 5 2009 273
6. K. Nomura, T. Kamiya, Y. Kikuchi, M. Hirano, and H. Hosono Thin Solid Films 518 2010 3012
7. E.G. Chong, K.C. Jo, and S.Y. Lee Appl. Phys. Lett. 96 2010 152102
8. S. Yang, D.H. Cho, M.K. Ryu, S.H.K. Park, C.S. Hwang, J. Jang, and J.K. Jeong IEEE Electron Devices Lett. 31 2 2010 144
9. K.C. Jeon, C.J. Kim, I.H. Song, J.C. Park, S.I. Kim, S.W. Kim, Y.S. Park, J.H. Park, S.W. Lee, D.M. Kim, and D.H. Kim Appl. Phys. Lett. 93 2008 182102
10. Y.K. Moon, S. Lee, W.S. Kim, B.W. Kang, C.O. Jeong, D.H. Lee, and J.W. Park Appl. Phys. Lett. 95 2009 013507
11. S.I. Kim, J.S. Park, C.J. Kim, J.C. Park, I.H. Song, and Y.S. Park J. Electrochem. Soc. 156 2009 H 184
12. S.I. Kim, C.J. Kim, J.C. Park, I.H. Song, S.W. Kim, H. Yin, E.H. Lee, J.C. Lee, and Y.S. Park Electron Devices Meeting, IEDM 2008 2008 IEEE International 1
13. S.W. Lee, S.W. Park, S.C. Kim, Y.W. Jeon, K.C. Jeon, J.H. Park, J.C. Park, I.H. Song, C.J. Kim, Y.S. Park, D.M. Kim, and D.H. Kim IEEE Electron Devices Lett. 31 2010 231
14. M. Kimura, T. Kamiya, T. Nakanishi, and K. Nomura Appl. Phys. Lett. 96 2010 262105
15. M.K. Ryu, S.H. Yang, S.H.K. Park, C.S. Hwang, and J.K. Jeong Appl. Phys. Lett. 95 2009 173508
16. A. Dolega, A. Ciborskaa, J. Chojnackia, M. Walewskia, and W. Wojnowski Thermoch. Acta. 429 2005 103
17. J.H. Jeong, H.W. Yang, J.S. Park, J.K. Jeong, Y.G. Mo, H.D. Kim, J. Song, and C.S. Hwang Electrochem. Solid State Lett. 11 6 2008 H157
18. D.Y. Cho, J.W. Song, Y.C. Shin, C.S. Hwang, W.S. Choi, and J.K. Jeong Electrochem. Solid State Lett. 12 2009 H208
19. C.L. Reynolds, V. Swaminathan Jr., M. Geva, L.E. Smith, and L.C. Luther J. Electron. Mat. 24 1995 747
20. S.M. Sze Physics of semiconductor devices 1981 Willey New York p. 456
21. T.C. Fung, K. Abe, H. Kumomi, and J. Kani cki J. Display Technol. 5 2009 452