Electronic structures above mobility edges in crystalline and amorphous In-Ga-Zn-O: Percolation conduction examined by analytical model

IEEE/OSA Journal of Display Technology

Volumn 5, Issue 12, 2009, Pages 462-467

  Kamiya, Toshio ^a   Nomura, Kenji ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous oxide semiconductor (AOS); Hall effect; Percolation conduction; Potential barrier

Indexed keywords

AMORPHOUS STRUCTURES; AMORPHOUS-OXIDE SEMICONDUCTOR (AOS); ANALYTICAL EQUATIONS; ANALYTICAL MODEL; ANALYTICAL RELATIONS; ATOMIC STRUCTURE; AVERAGE HEIGHT; CONDUCTION MODELS; DEPOSITION CONDITIONS; DISORDERED STRUCTURES; DONOR LEVELS; FREE-ELECTRON DENSITY; HALL MEASUREMENTS; HIGH QUALITY; NUMERICAL CALCULATION; OXIDE SEMICONDUCTOR; POTENTIAL BARRIERS; ROOM TEMPERATURE; SATURATION REGIME; TEMPERATURE DEPENDENCE; ZNO;

CRYSTALLINE MATERIALS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FREONS; GYRATORS; HALL EFFECT; MAGNETIC FIELD EFFECTS; NUCLEAR PHYSICS; SOLVENTS; ZINC; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 70450216988     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2009.2022064     Document Type: Article

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