Achieving high field-effect mobility exceeding 50 cm2/Vs in In-Zn-Sn-O thin-film transistors

IEEE Electron Device Letters

Volumn 35, Issue 8, 2014, Pages 853-855

  Song, Ji Hun ^a   Kim, Kwang Suk ^b   Mo, Yeon Gon ^b   Choi, Rino ^a   Jeong, Jae Kyeong ^a  

^a Inha University   (South Korea)

^b Samsung Display Co   (South Korea)

Author keywords

high mobility; hydrogen; Indium zinc tin oxide semiconductor; nitride film; passivation; thin film transistors

Indexed keywords

HYDROGEN; INDIUM; PASSIVATION; SEMICONDUCTING INDIUM; THIN FILM TRANSISTORS; ZINC;

CHANNEL LAYERS; FIELD-EFFECT MOBILITIES; HIGH MOBILITY; NEGATIVE BIAS; NITRIDE FILMS; ON-OFF RATIO; THIN-FILM TRANSISTOR (TFTS); ZINC TIN OXIDE;

TIN;

EID: 84905013128     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2329892     Document Type: Article

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