SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 12, 2011, Pages

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

(11) Kim, Ji In a Hwan Ji, Kwang a Yoon Jung, Hong a Yeob Park, Se a Choi, Rino a Jang, Mi a Yang, Hoichang a Kim, Dae Hwan b Bae, Jong Uk b Dong Kim, Chang b Kyeong Jeong, Jae a

a Inha University (South Korea)

b LG Display Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER DEVICES; BIAS STABILITY; GATE INSULATOR; INDIUM TIN OXIDE; INTERFACIAL TRAPS; NEGATIVE BIAS; SUPERIOR MOBILITY; THRESHOLD VOLTAGE SHIFTS; ULTRA-THIN;

FILM THICKNESS; INDIUM; INTERFACES (MATERIALS); THRESHOLD VOLTAGE; TIN; TIN OXIDES;

THIN FILM TRANSISTORS;

EID: 80053389485 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3643054 Document Type: Article

Times cited : (66)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.