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Applied Physics Letters

Volumn 103, Issue 17, 2013, Pages

Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

(6) Rajachidambaram, M S a Pandey, A b Vilayurganapathy, S b Nachimuthu, P b Thevuthasan, S b Herman, G S a

a Oregon State University (United States)

b PACIFIC NORTHWEST NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNELS; BOTTOM GATE THIN FILM TRANSISTORS; MOLECULAR SPECIES; TURN-ON VOLTAGES; ZINC TIN OXIDE; ZINC-TIN-OXIDE (ZTO);

PASSIVATION; PHOTOELECTRONS; SELF ASSEMBLED MONOLAYERS; SURFACE CHEMISTRY; THIN FILM TRANSISTORS; THIN FILMS; TIN; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

BIAS VOLTAGE;

EID: 84887121833 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4826457 Document Type: Article

Times cited : (31)

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