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Volumn 45, Issue 22, 2012, Pages

Effect of Ti addition on the characteristics of titanium-zinc-tin-oxide thin-film transistors fabricated via a solution process

(4) Do, Jong Chil a Ahn, Cheol Hyoun b Cho, Hyung Koun b Lee, Ho Seong a

a Kyungpook National University (South Korea)

b Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; OFF-CURRENT; ON/OFF CURRENT RATIO; POSITIVE BIAS; SOLUTION PROCESS; THIN-FILM TRANSISTOR (TFTS); TI ADDITION; TI CONTENT;

TIN; TITANIUM; TITANIUM OXIDES;

THIN FILM TRANSISTORS;

EID: 84861389485 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/22/225103 Document Type: Article

Times cited : (20)

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