Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 189-192

  Park, Sung Min ^a   Lee, Dong Hee ^a   Lim, You Sung ^a   Kim, Dae Kuk ^a   Yi, Moonsuk ^a  

^a Pusan National University   (South Korea)

Author keywords

Al IZO; Amorphous oxide; Oxide TFT; Solution derived thin film transistors; TFT

Indexed keywords

AL-IZO; ALUMINUM INCORPORATION; AMORPHOUS OXIDES; ELECTRICAL CHARACTERISTIC; OXIDE TFT; OXIDE THIN-FILM TRANSISTORS; TFT; THIN-FILM TRANSISTOR (TFTS);

ALUMINUM; OPTIMIZATION; THIN FILM TRANSISTORS; THIN FILMS;

ALUMINUM COATINGS;

EID: 84876881131     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.121     Document Type: Article

References (22)

1. Gopal K. Mor, Karthik Shankar, Maggie Paulose, Oomman K. Varghese, and Craig A. Grimes Nano Lett. 6 2006 215
2. Li Chao, Zhang Daihua, Liu Xiaolei, Han Song, Tang Tao, Han Jie, and Zhou Chongwu Appl. Phys. Lett. 82 2003 1613
3. E. Fortunato, P. Barquinha, G. Gonclves, L. Pereira, and R. Martins Solid State Electron. 52 2008 443
4. N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono Phys. Status Solidi A 205 2008 1915
5. M. Kim, J.H. Jeong, H.J. Lee, T.K. Ahn, H.S. Shin, J.-S. Park, J.-K. Jeong, Y.G. Mo, and H.D. Kim Appl. Phys. Lett. 90 2007 212114
6. J.-S. Park, K.S. Kim, Y.-G. Park, Y.-G. Mo, H.D. Kim, and J.K. Jeong Adv. Mater. 21 2009 329
7. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono Science 300 2003 1269
8. Christophe Avis, and Jin Jang J. Mater. Chem. 21 2011 10649
9. G.H. Kim, B.D. Ahn, H.S. Shin, W.H. Jeong, and H.J. Kim Appl Phys. Lett. 94 2009 233501
10. N.L. Dehuff, E.S. Kettenring, D. Hong, H.Q. Chiang, J.F. Wager, R.L. Hoffman, C.H. Park, and D.A. Keszler J. Appl. Phys. 97 2005 064505
11. D.C. Paine, B. Yaglioglu, Z. Beiley, and S.H. Lee Thin Solid Films 516 2008 5894
12. W.S. Choi Mater. Lett. 8 2012 87
13. M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hosono Appl. Phys. Lett. 92 2008 133512
14. D.H. Son, D.H. Kim, S.J. Sun, E.A. Jung, and J.K. Kang Curr. Appl. Phys. 10 2010 e157
15. J.H. Park, Y.B. Yoo, K.H Lee, W.S. Jang, J.Y. Oh, S.S. Chae1, W.J. Choi, and H.K. Baik Appl. Phys. Express 5 2012 111101
16. K.M. Kim, W.H. Jeong, D.L. Kim, Y.S. Rim, Y. Choi, M.-K. Ryu, K.-B. Park, and H.J. Kim IEEE Electron Device Lett. 32 2011 1242
17. K. Tominga, T. Takao, A. Fukushima, T. Moriga, and I. Nakabayashi Vacuum 66 2002 505
18. E. Hosono, S. Fujihara, and T. Kimura J. Mater. Chem. 14 2004 881
19. S.-Y. Han, and C.-h. Chang Electrochem. Solid State Lett. 11 2008 H7
20. C.S. Hong, H.H. Kim, H.W. Kim, N.H. Cho, I.H. Lee, I.M. Lee, and C.M. Lee J. Ceram. Soc. Jpn. 117 2009 566
21. J.H. Jeong, H.W. Yang, J.S. Park, J.K. Jeong, Y.G. Mo, H.D. Kim, J. Song, and C.S. Hwang Electrochem. Solid State Lett. 11 2008 H157
22. N. Ito, Y. Sato, P.K. Song, A. Kaijio, K. Inoue, and Y. Shigesato Thin Solid Films 496 2006 99