Source/drain formation of self-aligned top-gate amorphous GaInZnO thin-film transistors by NH3 plasma treatment

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 374-376

  Kim, Sangwook ^a   Park, Jaechul ^a   Kim, Changjung ^a   Song, Ihun ^a   Kim, Sunil ^a   Park, Sungho ^a   Yin, Huaxiang ^a   Lee, Hyung Ik ^a   Lee, Eunha ^a   Park, Youngsoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Amorphous gallium indium zinc oxide thin film transistors (a GIZO TFTs); Plasma treatment; Self aligned top gate structure; Series resistance

Indexed keywords

ACTIVE LAYERS; AMORPHOUS GALLIUM-INDIUM-ZINC-OXIDE THIN-FILM TRANSISTORS (A-GIZO TFTS); ELECTRICAL PROPERTIES; FIELD-EFFECT MOBILITIES; GAINZNO; GAS PLASMAS; PLASMA TREATMENT; SELF-ALIGNED TOP-GATE STRUCTURE; SERIES RESISTANCE; SOURCE/DRAIN REGIONS; SUB-THRESHOLD SWINGS;

ELECTRIC PROPERTIES; ION BOMBARDMENT; ION IMPLANTATION; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC;

INDIUM;

EID: 67349285093     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2014181     Document Type: Article

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