SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 10, 2011, Pages

Metal reaction doping and ohmic contact with Cu-Mn electrode on amorphous In-Ga-Zn-O semiconductor

(2) Yun, P S a Koike, J a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT STRUCTURE; CURRENT-VOLTAGE MEASUREMENTS; DONOR DOPING; ELECTRICAL PROPERTY; ELECTRODE MATERIAL; EXCELLENT PERFORMANCE; METAL REACTIONS; NONLINEAR BEHAVIOR; OHMIC BEHAVIOR; OUTPUT CHARACTERISTICS; OXIDE SEMICONDUCTOR;

AMORPHOUS FILMS; COPPER ALLOYS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; FLAT PANEL DISPLAYS; GALLIUM ALLOYS; MANGANESE; OHMIC CONTACTS; SEMICONDUCTOR DOPING; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC;

COPPER;

EID: 80052083886 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3621723 Document Type: Article

Times cited : (54)

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