Vertical channel zno thin-film transistors using an atomic layer deposition method

IEEE Electron Device Letters

Volumn 35, Issue 3, 2014, Pages 360-362

  Hwang, Chi Sun ^a   Park, Sang Hee Ko ^a   Oh, Himchan ^a   Ryu, Min Ki ^a   Cho, Kyoung Ik ^a   Yoon, Sung Min ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

In Ga Zn O (IGZO); Oxide semiconductor; thin film transistor (TFT); vertical channel

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); DEVICE APPLICATION; GATE INSULATOR LAYERS; IN-GA-ZN-O (IGZO); LOW-POWER CONSUMPTION; OXIDE SEMICONDUCTOR; THIN-FILM TRANSISTOR (TFTS); VERTICAL CHANNELS;

ATOMIC LAYER DEPOSITION; DEPOSITION; DRAIN CURRENT; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84896747932     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2296604     Document Type: Article

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