SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 16, 2011, Pages

Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process

(4) Yong Chong, Ho a Wan Han, Kyu a Soo No, Young a Whan Kim, Tae a

a Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; ELECTRICAL CHARACTERISTIC; MOLAR RATIO; OFF-CURRENT; ON/OFF CURRENT RATIO; PEAK INTENSITY; POSITIVE SHIFT; SOLUTION PROCESS; TI ATOMS; X-RAY PHOTOELECTRON SPECTROSCOPY SPECTRA;

CARRIER CONCENTRATION; INDIUM; PHOTOELECTRON SPECTROSCOPY; THIN FILM DEVICES; TITANIUM; TITANIUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILM TRANSISTORS;

EID: 80155140304 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3655197 Document Type: Article

Times cited : (42)

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