메뉴 건너뛰기




Volumn 28, Issue 16, 2013, Pages 2071-2084

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATRIX DISPLAYS; DEGRADATION MECHANISM; DEVICE PERFORMANCE; INFORMATION DISPLAY; LITERATURE REVIEWS; METAL OXIDE THIN-FILM TRANSISTORS; PHOTOIONIZATION MODELS; SILICON-BASED ELECTRONICS;

EID: 84883281611     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2013.214     Document Type: Review
Times cited : (174)

References (86)
  • 1
    • 78149397462 scopus 로고    scopus 로고
    • Required characteristics of TFTs for next generation flat panel display backplanes
    • Tokyo, Japan, January 28-29
    • Y. Matsueda: Required characteristics of TFTs for next generation flat panel display backplanes. Digest of International Transistor Conference, Tokyo, Japan, January 28-29, 2010, p. 314.
    • (2010) Digest of International Transistor Conference , pp. 314
    • Matsueda, Y.1
  • 2
    • 35949011407 scopus 로고
    • Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
    • W.B. Jackson and M.D. Moyer: Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen. Phys. Rev. B 36, 6217-6220 (1987).
    • (1987) Phys. Rev. B , vol.36 , pp. 6217-6220
    • Jackson, W.B.1    Moyer, M.D.2
  • 3
    • 21544438388 scopus 로고
    • Charge trapping instabilities in amorphous siliconsilicon nitride thin-film transistors
    • M.J. Powell: Charge trapping instabilities in amorphous siliconsilicon nitride thin-film transistors. Appl. Phys. Lett. 43, 597-599 (1983).
    • (1983) Appl. Phys. Lett. , vol.43 , pp. 597-599
    • Powell, M.J.1
  • 4
    • 24144462850 scopus 로고    scopus 로고
    • Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress
    • M. Jahinuzzaman, A. Sultana, K. Sakariya, P. Servati, and A. Nathan: Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress. Appl. Phys. Lett. 87, 023502 (2005).
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 023502
    • Jahinuzzaman, M.1    Sultana, A.2    Sakariya, K.3    Servati, P.4    Nathan, A.5
  • 5
    • 0030403279 scopus 로고    scopus 로고
    • Amorphous silicon thin-film transistors on steel foil substrates
    • S.D. Theiss and S.Wagner: Amorphous silicon thin-film transistors on steel foil substrates. IEEE Electron Device Lett. 17, 578-580 (1996).
    • (1996) IEEE Electron Device Lett. , vol.17 , pp. 578-580
    • Theiss, S.D.1    Wagner, S.2
  • 6
    • 0036564698 scopus 로고    scopus 로고
    • High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films
    • T. Serikawa and F. Omata: High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films. IEEE Trans. Electron Devices 49, 820-825 (2002).
    • (2002) IEEE Trans. Electron Devices , vol.49 , pp. 820-825
    • Serikawa, T.1    Omata, F.2
  • 8
    • 36449004108 scopus 로고
    • Phase transformation mechanism involved in excimer laser crystallization of amorphous silicon films
    • J.S. Im, H.J. Kim, and M.O. Thompson: Phase transformation mechanism involved in excimer laser crystallization of amorphous silicon films. Appl. Phys. Lett. 63, 1969-1971 (1993).
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 1969-1971
    • Im, J.S.1    Kim, H.J.2    Thompson, M.O.3
  • 9
    • 84861829395 scopus 로고    scopus 로고
    • Oxide semiconductor thin-film transistors: A review of recent advances
    • E. Fortunato, P. Barquinha, and R. Martins: Oxide semiconductor thin-film transistors: A review of recent advances. Adv. Mater. 24, 2945-2986 (2012).
    • (2012) Adv. Mater. , vol.24 , pp. 2945-2986
    • Fortunato, E.1    Barquinha, P.2    Martins, R.3
  • 10
    • 84855965812 scopus 로고    scopus 로고
    • Review of recent development in amorphous oxide semiconductor thin-film transistor devices
    • J.S. Park, S-J. Maeng, H-S. Kim, and J-S. Park: Review of recent development in amorphous oxide semiconductor thin-film transistor devices. Thin Solid Films 520, 1679-1693 (2012).
    • (2012) Thin Solid Films , vol.520 , pp. 1679-1693
    • Park, J.S.1    Maeng, S.-J.2    Kim, H.-S.3    Park, J.-S.4
  • 11
    • 79954581570 scopus 로고    scopus 로고
    • Transparent amorphous oxide semiconductor thin film transistor
    • J.Y. Kwon, D.J. Lee, and K.B. Kim: Transparent amorphous oxide semiconductor thin film transistor. Electron. Mater. Lett. 7, 1-11 (2011).
    • (2011) Electron. Mater. Lett. , vol.7 , pp. 1-11
    • Kwon, J.Y.1    Lee, D.J.2    Kim, K.B.3
  • 12
    • 78149382528 scopus 로고    scopus 로고
    • Present status of amorphous In-Ga-Zn-O thin-film transistors
    • T. Kamiya, K. Nomura, and H. Hosono: Present status of amorphous In-Ga-Zn-O thin-film transistors. Sci. Technol. Adv. Mater. 11, 044305-1-23 (2010).
    • (2010) Sci. Technol. Adv. Mater. , vol.11 , pp. 0443051-04430523
    • Kamiya, T.1    Nomura, K.2    Hosono, H.3
  • 13
    • 9744248669 scopus 로고    scopus 로고
    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono: Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488-492 (2004).
    • (2004) Nature , vol.432 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 14
    • 33745435681 scopus 로고    scopus 로고
    • Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
    • H. Hosono: Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application. J. Non-Cryst. Solids 352, 851-858 (2006).
    • (2006) J. Non-Cryst. Solids , vol.352 , pp. 851-858
    • Hosono, H.1
  • 15
    • 34250646701 scopus 로고    scopus 로고
    • Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system
    • 2421141-3
    • T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono: Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system. Appl. Phys. Lett. 90, 2421141-3 (2007).
    • (2007) Appl. Phys. Lett. , vol.90
    • Iwasaki, T.1    Itagaki, N.2    Den, T.3    Kumomi, H.4    Nomura, K.5    Kamiya, T.6    Hosono, H.7
  • 16
    • 34548684568 scopus 로고    scopus 로고
    • High performance thin film transistors with co-sputtered amorphous indium gallium zinc oxide channel
    • J.K. Jeong, J.H. Jeong, H.W. Yang, J.S. Park, Y.G. Mo, and H.D. Kim: High performance thin film transistors with co-sputtered amorphous indium gallium zinc oxide channel. Appl. Phys. Lett. 91, 113505-1-3 (2007).
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 1135051-1135053
    • Jeong, J.K.1    Jeong, J.H.2    Yang, H.W.3    Park, J.S.4    Mo, Y.G.5    Kim, H.D.6
  • 24
    • 84883304623 scopus 로고    scopus 로고
    • OLED
    • OLED. http://en.wikipedia.org/wiki/OLED.
  • 26
    • 79951993680 scopus 로고    scopus 로고
    • The status and perspectives of metal oxide thin film transistors for active matrix flexible displays
    • J.K. Jeong: The status and perspectives of metal oxide thin film transistors for active matrix flexible displays. Semicond. Sci. Technol. 26, 034008-1-10 (2011).
    • (2011) Semicond. Sci. Technol. , vol.26 , pp. 0340081-03400810
    • Jeong, J.K.1
  • 27
    • 33846070644 scopus 로고    scopus 로고
    • Investigating the stability of zinc oxide thin film transistors
    • R.B.M. Cross and M.M. De Souza: Investigating the stability of zinc oxide thin film transistors. Appl. Phys. Lett. 89, 263513-1-3 (2006).
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 2635131-2635133
    • Cross, R.B.M.1    De Souza, M.M.2
  • 28
    • 38549145327 scopus 로고    scopus 로고
    • Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
    • A. Suresh and J.F. Muth: Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. Appl. Phys. Lett. 92, 033502-1-3 (2008).
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 0335021-0335023
    • Suresh, A.1    Muth, J.F.2
  • 29
    • 44349136836 scopus 로고    scopus 로고
    • Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy
    • K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono: Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy. Appl. Phys. Lett. 92, 202117-1-3 (2008).
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 2021171-2021173
    • Nomura, K.1    Kamiya, T.2    Yanagi, H.3    Ikenaga, E.4    Yang, K.5    Kobayashi, K.6    Hirano, M.7    Hosono, H.8
  • 30
    • 77956853370 scopus 로고    scopus 로고
    • Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress
    • K. Ghaffazadeh, A. Nathan, J. Roberson, S. Kim, S. Jeong, C. Kim, U-I. Chung, and J.H. Lee: Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress. Appl. Phys. Lett. 97, 113504-1-3 (2010).
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 1135041-1135043
    • Ghaffazadeh, K.1    Nathan, A.2    Roberson, J.3    Kim, S.4    Jeong, S.5    Kim, C.6    Chung, U.-I.7    Lee, J.H.8
  • 34
    • 79952687049 scopus 로고    scopus 로고
    • Effect of highpressure oxygen annealing on negative bias illumination stressinduced instability of InGaZnO thin film transistors
    • K.H. Ji, J-I. Kim, H.Y. Jung, S.Y. Park, R. Choi, U.K. Kim, C.S. Hwang, D. Lee, H. Hwang, and J.K. Jeong: Effect of highpressure oxygen annealing on negative bias illumination stressinduced instability of InGaZnO thin film transistors. Appl. Phys. Lett. 98, 103509-1-3 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 1035091-1035093
    • Ji, K.H.1    Kim, J.-I.2    Jung, H.Y.3    Park, S.Y.4    Choi, R.5    Kim, U.K.6    Hwang, C.S.7    Lee, D.8    Hwang, H.9    Jeong, J.K.10
  • 35
    • 77955160907 scopus 로고    scopus 로고
    • O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors
    • B. Ryu, H-K. Noh, E-A. Choi, and K.J. Chang: O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Appl. Phys. Lett. 97, 022108-1-3 (2010).
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 0221081-0221083
    • Ryu, B.1    Noh, H.-K.2    Choi, E.-A.3    Chang, K.J.4
  • 36
    • 77956252679 scopus 로고    scopus 로고
    • Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer
    • S. Yang, D-H. Cho, M.K. Ryu, S-H.K. Park, C-S. Hwang, J. Jang, and J.K. Jeong: Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer. Appl. Phys. Lett. 96, 213511-1-3 (2010).
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 2135111-2135113
    • Yang, S.1    Cho, D.-H.2    Ryu, M.K.3    Park, S.-H.K.4    Hwang, C.-S.5    Jang, J.6    Jeong, J.K.7
  • 37
    • 0019026937 scopus 로고
    • Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon
    • D.L. Staebler and C.R. Wronski: Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon. J. Appl. Phys. 51, 3262-3268 (1980).
    • (1980) J. Appl. Phys. , vol.51 , pp. 3262-3268
    • Staebler, D.L.1    Wronski, C.R.2
  • 38
    • 4243798052 scopus 로고
    • Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
    • M. Stutzmann, W.B. Jackson, and C.C. Tsai: Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. Phys. Rev. B 32, 23-47 (1985).
    • (1985) Phys. Rev. B , vol.32 , pp. 23-47
    • Stutzmann, M.1    Jackson, W.B.2    Tsai, C.C.3
  • 41
    • 67650492747 scopus 로고    scopus 로고
    • Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasmatreated insulator
    • Y-K. Moon, S. Lee, W-S. Kim, B-W. Kang, C-O. Jeong, D-H. Lee, and J-W. Park: Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasmatreated insulator. Appl. Phys. Lett. 95, 013507-1-3 (2009).
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 0135071-0135073
    • Moon, Y.-K.1    Lee, S.2    Kim, W.-S.3    Kang, B.-W.4    Jeong, C.-O.5    Lee, D.-H.6    Park, J.-W.7
  • 44
    • 4344661847 scopus 로고    scopus 로고
    • Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer
    • Y-N. Tan, W-K. Chim, B.J. Cho, and W-K. Choi: Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer. IEEE Trans. Electron Devices 51, 1143-1145 (2004).
    • (2004) IEEE Trans. Electron Devices , vol.51 , pp. 1143-1145
    • Tan, Y.-N.1    Chim, W.-K.2    Cho, B.J.3    Choi, W.-K.4
  • 46
    • 33749233582 scopus 로고    scopus 로고
    • Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductor
    • S. Lany and A. Zunger: Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductor. Phys. Rev. B 72, 035215-1-13 (2005).
    • (2005) Phys. Rev. B , vol.72 , pp. 0352151-03521513
    • Lany, S.1    Zunger, A.2
  • 47
    • 35148897661 scopus 로고    scopus 로고
    • Native point defects in ZnO
    • A. Janotti and C.G. Van de Walle: Native point defects in ZnO. Phys. Rev. B 76, 165202-1-22 (2007).
    • (2007) Phys. Rev. B , vol.76 , pp. 1652021-1652022
    • Janotti, A.1    Van De Walle, C.G.2
  • 48
    • 70449730669 scopus 로고    scopus 로고
    • Fundamentals of zinc oxide as a semiconductor
    • A. Janotti and C.G. Van de Walle: Fundamentals of zinc oxide as a semiconductor. Rep. Prog. Phys. 72, 126501-1-27 (2009).
    • (2009) Rep. Prog. Phys. , vol.72 , pp. 1265011-1265027
    • Janotti, A.1    Van De Walle, C.G.2
  • 50
    • 78149458396 scopus 로고    scopus 로고
    • Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors
    • M.D.H. Chowdhury, P. Migliorato, and J. Jang: Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors. Appl. Phys. Lett. 97, 173506-1-3 (2010).
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 1735061-1735063
    • Chowdhury, M.D.H.1    Migliorato, P.2    Jang, J.3
  • 51
    • 67449108542 scopus 로고    scopus 로고
    • First-principles study of native point defects in crystalline indium gallium zinc oxide
    • H. Omura, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono: First-principles study of native point defects in crystalline indium gallium zinc oxide. J. Appl. Phys. 105, 093712-1-8 (2009).
    • (2009) J. Appl. Phys. , vol.105 , pp. 0937121-0937128
    • Omura, H.1    Kumomi, H.2    Nomura, K.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 52
    • 78649300313 scopus 로고    scopus 로고
    • Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor
    • H. Oh, S-M. Yoon, M.K. Ryu, C-S. Hwang, S. Yang, and S-H.K. Park: Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor. Appl. Phys. Lett. 97, 183502-1-3 (2010).
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 1835021-1835023
    • Oh, H.1    Yoon, S.-M.2    Ryu, M.K.3    Hwang, C.-S.4    Yang, S.5    Park, S.-H.K.6
  • 53
    • 79960482790 scopus 로고    scopus 로고
    • Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material
    • H. Oh, S-H.K. Park, C-S. Hwnag, S. Yang, and M.K. Ryu: Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material. Appl. Phys. Lett. 99, 022105-1-3 (2011).
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 0221051-0221053
    • Oh, H.1    Park, S.-H.K.2    Hwnag, C.-S.3    Yang, S.4    Ryu, M.K.5
  • 54
    • 84865837419 scopus 로고    scopus 로고
    • Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach
    • S. Oh, B.S. Yang, Y.J. Kim, M.S. Oh, M. Jang, H. Yang, J.K. Jeong, C.S. Hwang, and H.J. Kim: Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach. Appl. Phys. Lett. 101, 092107-1-5 (2012).
    • (2012) Appl. Phys. Lett. , vol.101 , pp. 0921071-0921075
    • Oh, S.1    Yang, B.S.2    Kim, Y.J.3    Oh, M.S.4    Jang, M.5    Yang, H.6    Jeong, J.K.7    Hwang, C.S.8    Kim, H.J.9
  • 55
    • 84866846934 scopus 로고    scopus 로고
    • Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor
    • P. Migliorato, M.D.H. Chowdhury, J.G. Um, M. Seok, and J. Jang: Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor. Appl. Phys. Lett. 101, 123502-1-5 (2012).
    • (2012) Appl. Phys. Lett. , vol.101 , pp. 1235021-1235025
    • Migliorato, P.1    Chowdhury, M.D.H.2    Um, J.G.3    Seok, M.4    Jang, J.5
  • 56
    • 84862229103 scopus 로고    scopus 로고
    • Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state
    • H-H. Nahm, Y-S. Kim, and D.H. Kim: Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state. Phys. Status Solidi B 249, 1277-1281 (2012).
    • (2012) Phys. Status Solidi B , vol.249 , pp. 1277-1281
    • Nahm, H.-H.1    Kim, Y.-S.2    Kim, D.H.3
  • 57
    • 77954735967 scopus 로고    scopus 로고
    • Large photoresponse in amorphous In-Ga-Zn-O and origin of reversible and slow decay semiconductor devices, materials, and processing
    • D.H. Lee, K. Kawamura, K. Nomura, T. Kamiya, and H. Hosono: Large photoresponse in amorphous In-Ga-Zn-O and origin of reversible and slow decay semiconductor devices, materials, and processing. Electrochem. Solid-State Lett. 13, H324-H327 (2010).
    • (2010) Electrochem. Solid-State Lett. , vol.13
    • Lee, D.H.1    Kawamura, K.2    Nomura, K.3    Kamiya, T.4    Hosono, H.5
  • 58
    • 79954618666 scopus 로고    scopus 로고
    • Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors
    • M.D.H. Chowdhury, P. Migliorato, and J. Jang: Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc- oxide thin-film-transistors. Appl. Phys. Lett. 98, 153511-1-3 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 1535111-1535113
    • Chowdhury, M.D.H.1    Migliorato, P.2    Jang, J.3
  • 59
    • 0033704990 scopus 로고    scopus 로고
    • Grain size control and gas sensing properties of ZnO gas sensor
    • J. Xu, Q. Pan, Y. Shun, and Z. Tian: Grain size control and gas sensing properties of ZnO gas sensor. Sens. Actuators, B 66(1-3), 277-279 (2000).
    • (2000) Sens. Actuators B , vol.66 , Issue.1-3 , pp. 277-279
    • Xu, J.1    Pan, Q.2    Shun, Y.3    Tian, Z.4
  • 60
    • 18544389992 scopus 로고    scopus 로고
    • Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor
    • S.T. Shishiyanu, T.S. Shishiyanu, and O.I. Lupan: Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor. Sens. Actuators, B 107, 379-386 (2005).
    • (2005) Sens. Actuators B , vol.107 , pp. 379-386
    • Shishiyanu, S.T.1    Shishiyanu, T.S.2    Lupan, O.I.3
  • 61
    • 34248399209 scopus 로고    scopus 로고
    • Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
    • D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, and J. Chung: Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules. Appl. Phys. Lett. 90, 192101-1-3 (2007).
    • (2007) Appl. Phys. Lett. , vol.90 , pp. 1921011-1921013
    • Kang, D.1    Lim, H.2    Kim, C.3    Song, I.4    Park, J.5    Park, Y.6    Chung, J.7
  • 62
    • 52949097961 scopus 로고    scopus 로고
    • Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
    • J.K. Jeong, H.W. Yang, J.H. Jeong, Y.G. Mo, and H.D. Kim: Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Appl. Phys. Lett. 93, 123508-1-3 (2008).
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 1235081-1235083
    • Jeong, J.K.1    Yang, H.W.2    Jeong, J.H.3    Mo, Y.G.4    Kim, H.D.5
  • 63
    • 77954343096 scopus 로고    scopus 로고
    • Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
    • Y.C. Chen, T.C. Chang, H.W. Li, S.C. Chen, J. Lu, W.F. Chung, Y.H. Tai, and T.Y. Tseng: Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress. Appl. Phys. Lett. 96, 262104-1-3 (2010).
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 2621041-2621043
    • Chen, Y.C.1    Chang, T.C.2    Li, H.W.3    Chen, S.C.4    Lu, J.5    Chung, W.F.6    Tai, Y.H.7    Tseng, T.Y.8
  • 64
    • 77949731627 scopus 로고    scopus 로고
    • Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
    • S.Y. Sung, J.H. Choi, U.B. Han, C.K. Lee, J.H. Lee, J.J. Kim, W. Lim, S.J. Pearton, D.P. Norton, and Y.W. Heo: Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors. Appl. Phys. Lett. 96, 102107-1-3 (2010).
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 1021071-1021073
    • Sung, S.Y.1    Choi, J.H.2    Han, U.B.3    Lee, C.K.4    Lee, J.H.5    Kim, J.J.6    Lim, W.7    Pearton, S.J.8    Norton, D.P.9    Heo, Y.W.10
  • 65
    • 0022183869 scopus 로고
    • Chemisorption and charge transfer at ionic semiconductor surfaces: Implication in designing gas sensors
    • W. Göpel: Chemisorption and charge transfer at ionic semiconductor surfaces: Implication in designing gas sensors. Prog. Surf. Sci. 20, 9-103 (1985).
    • (1985) Prog. Surf. Sci. , vol.20 , pp. 9-103
    • Göpel, W.1
  • 66
    • 0018520506 scopus 로고
    • Initial steps of interface formation: Surface states and thermodynamics
    • W. Göpel: Initial steps of interface formation: Surface states and thermodynamics. J. Vac. Sci. Technol. 16, 1229-1235 (1979).
    • (1979) J. Vac. Sci. Technol. , vol.16 , pp. 1229-1235
    • Göpel, W.1
  • 67
    • 67650713952 scopus 로고    scopus 로고
    • Encapsulation of zinc tin oxide based thin film transistors
    • P. Gorrn, T. Riedl, and W. Kowalsky: Encapsulation of zinc tin oxide based thin film transistors. J. Phys. Chem. C 113, 11126-11130 (2009).
    • (2009) J. Phys. Chem. C , vol.113 , pp. 11126-11130
    • Gorrn, P.1    Riedl, T.2    Kowalsky, W.3
  • 68
    • 71949092733 scopus 로고    scopus 로고
    • The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors
    • K-H. Lee, J.S. Jung, K.S. Son, J.S. Park, T.S. Kim, R. Choi, J.K. Jeong, J-Y. Kwon, B. Koo, and S. Lee: The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors. Appl. Phys. Lett. 95, 232106-1-3 (2009).
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 2321061-2321063
    • Lee, K.-H.1    Jung, J.S.2    Son, K.S.3    Park, J.S.4    Kim, T.S.5    Choi, R.6    Jeong, J.K.7    Kwon, J.-Y.8    Koo, B.9    Lee, S.10
  • 73
    • 84859983888 scopus 로고    scopus 로고
    • Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °c
    • S.Y. Park, K.H. Ji, J-I. Kim, H.Y. Jung, R. Choi, K.S. Son, M.K. Ryu, S. Lee, and J.K. Jeong: Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C. Appl. Phys. Lett. 100, 162108-1-4 (2012).
    • (2012) Appl. Phys. Lett. , vol.100 , pp. 1621081-1621084
    • Park, S.Y.1    Ji, K.H.2    Kim, J.-I.3    Jung, H.Y.4    Choi, R.5    Son, K.S.6    Ryu, M.K.7    Lee, S.8    Jeong, J.K.9
  • 75
    • 80052785261 scopus 로고    scopus 로고
    • Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment
    • S. Yang, K.H. Ji, U.K. Kim, C.S. Hwang, S-H.K. Park, C-S. Hwang, J. Jang, and J.K. Jeong: Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment. Appl. Phys. Lett. 99, 102103-1-3 (2011).
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 1021031-1021033
    • Yang, S.1    Ji, K.H.2    Kim, U.K.3    Hwang, C.S.4    Park, S.-H.K.5    Hwang, C.-S.6    Jang, J.7    Jeong, J.K.8
  • 76
    • 84861321784 scopus 로고    scopus 로고
    • Improvement of the photo-bias stability of the Zn-Sn-O field effect transistors by an ozone treatment
    • B.S. Yang, S. Park, S. Oh, Y.J. Kim, J.K. Jeong, C.S. Hwang, and H.J. Kim: Improvement of the photo-bias stability of the Zn-Sn-O field effect transistors by an ozone treatment. J. Mater. Chem. 22, 10994-10998 (2012).
    • (2012) J. Mater. Chem. , vol.22 , pp. 10994-10998
    • Yang, B.S.1    Park, S.2    Oh, S.3    Kim, Y.J.4    Jeong, J.K.5    Hwang, C.S.6    Kim, H.J.7
  • 78
    • 79953906760 scopus 로고    scopus 로고
    • Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors
    • B.S. Yang, M.S. Huh, S. Oh, U.S. Lee, Y.J. Kim, M.S. Oh, J.K. Jeong, C.S. Hwang, and H.J. Kim: Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors. Appl. Phys. Lett. 98, 122110-1-3 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 1221101-1221103
    • Yang, B.S.1    Huh, M.S.2    Oh, S.3    Lee, U.S.4    Kim, Y.J.5    Oh, M.S.6    Jeong, J.K.7    Hwang, C.S.8    Kim, H.J.9
  • 80
    • 77950315123 scopus 로고    scopus 로고
    • Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors
    • T. Kamiya, K. Nomura, and H. Hosono: Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors. Appl. Phys. Lett. 96, 122103-1-3 (2010).
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 1221031-1221033
    • Kamiya, T.1    Nomura, K.2    Hosono, H.3
  • 82
    • 80051578933 scopus 로고    scopus 로고
    • Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
    • K. Nomura, T. Kamiya, and H. Hosono: Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects. Appl. Phys. Lett. 99, 053505-1-3 (2011).
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 0535051-0535053
    • Nomura, K.1    Kamiya, T.2    Hosono, H.3
  • 85
    • 77952510526 scopus 로고    scopus 로고
    • Instability of amorphous indium gallium zinc oxide thin film transistors under light illumination
    • D.P. Gosain and T. Tanaka: Instability of amorphous indium gallium zinc oxide thin film transistors under light illumination. Jpn. J. Appl. Phys. 48, 03B018-1-5 (2009).
    • (2009) Jpn. J. Appl. Phys. , vol.48
    • Gosain, D.P.1    Tanaka, T.2
  • 86
    • 77952579039 scopus 로고    scopus 로고
    • 4.0-inch active-matrix organic light-emitting diode display integrated with driver circuits using amorphous In-Ga-Zn-Oxide thin-film transistors with suppressed variation
    • H. Ohara, T. Sasaki, K. Noda, S. Ito, M. Sasaki, Y. Endo, S. Yoshitomi, J. Sakata, T. Serikawa, and S. Yamazaki: 4.0-inch active-matrix organic light-emitting diode display integrated with driver circuits using amorphous In-Ga-Zn-Oxide thin-film transistors with suppressed variation. Jpn. J. Appl. Phys. 49, 03CD02-1-6 (2010).
    • (2010) Jpn. J. Appl. Phys. , vol.49
    • Ohara, H.1    Sasaki, T.2    Noda, K.3    Ito, S.4    Sasaki, M.5    Endo, Y.6    Yoshitomi, S.7    Sakata, J.8    Serikawa, T.9    Yamazaki, S.10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.