Improvement in photo-bias stability of high-mobility indium zinc oxide thin-film transistors by oxygen high-pressure annealing

IEEE Electron Device Letters

Volumn 34, Issue 7, 2013, Pages 894-896

  Park, Se Yeob ^a   Song, Ji Hun ^a   Lee, Chang Kyu ^a   Son, Byeong Geun ^a   Lee, Chul Kyu ^a   Kim, Hyo Jin ^a   Choi, Rino ^a   Choi, Yu Jin ^b   Kim, Un Ki ^b   Hwang, Cheol Seong ^b   Kim, Hyeong Joon ^b   Jeong, Jae Kyeong ^a  

^a Inha University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

High mobility; indium zinc oxide semiconductor; oxygen vacancy; photo bias stability; thin film transistors (TFTs)

Indexed keywords

EFFECT OF OXYGEN; FIELD-EFFECT MOBILITIES; HIGH MOBILITY; HIGH-PRESSURE ANNEALING; INDIUM ZINC OXIDES; OXYGEN VACANCY DEFECTS; PASSIVATION LAYER; THIN-FILM TRANSISTOR (TFTS);

OXYGEN; OXYGEN VACANCIES; THIN FILM TRANSISTORS;

ANNEALING;

EID: 84880055115     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2259574     Document Type: Article

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