Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability

ACS Applied Materials and Interfaces

Volumn 4, Issue 10, 2012, Pages 5416-5421

  Kim, Hyun Suk ^a   Park, Joon Seok ^a   Jeong, Hyun Kwang ^b   Son, Kyoung Seok ^a   Kim, Tae Sang ^a   Seon, Jong Baek ^a   Lee, Eunha ^a   Chung, Jae Gwan ^a   Kim, Dae Hwan ^b   Ryu, Myungkwan ^a   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Kookmin University   (South Korea)

Author keywords

density of states; hafnium indium zinc oxide; indium zinc oxide; metal oxide thin film transistors; photostability

Indexed keywords

BACK CHANNELS; BI-LAYER; BI-LAYER DEVICES; DENSITY-OF STATES; DEVICE PERFORMANCE; DEVICE SIMULATIONS; DEVICE STABILITY; DISPLAY APPLICATION; HAFNIUM-INDIUM-ZINC-OXIDE; HIGH MOBILITY; INDIUM ZINC OXIDES; METAL OXIDES; MOBILITY VALUE; MODEL AND SIMULATION; OPTIMUM THICKNESS; PHOTO-STABILITY; THIN-FILM TRANSISTOR (TFTS);

COMPUTER SIMULATION; FLAT PANEL DISPLAYS; HAFNIUM; INDIUM; METALLIC COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC;

THIN FILM TRANSISTORS;

EID: 84867772178     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am301342x     Document Type: Article

References (22)

1. Miura, K.; Ueda, T.; Nakano, S.; Saito, N.; Hara, Y.; Sugi, K.; Sakano, T.; Yamaguchi, H.; Amemiya, I.; Akimoto, K.; Kameoka, H.; Tonotani, J. Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 2011, 42, 21-24
2. Kang, C.-K.; Park, Y.-S.; Park, S.-I.; Mo, Y.-G.; Kim, B.-H.; Kim, S. S. Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 2011, 42, 25-27
3. Morosawa, N.; Ohshima, Y.; Morooka, M.; Arai, T.; Sasaoka, T. Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 2011, 42, 479-482
4. Ohara, H.; Sasaki, T.; Noda, K.; Ito, S.; Sasaki, M.; Toyosumi, Y.; Endo, Y.; Yoshitomi, S.; Sakata, J.; Serikawa, T.; Yamazaki, S. Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 2009, 40, 284-287
5. Jeong, J. K.; Jeong, J. H.; Choi, J. H.; Im, J. S.; Kim, S. H.; Yang, H. W.; Kang, K. N.; Kim, K. S.; Ahn, T. K.; Chung, H.-J.; Chung, H. K. Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 2008, 39, 1-4
6. Lee, J.-H.; Kim, D.-H.; Yang, D.-J.; Hong, S.-Y.; Yoon, K.-S.; Hong, P.-S.; Jeong, C.-O.; Park, H.-S.; Kim, S. Y.; Lim, S. K.; Kim, S. S. Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 2008, 39, 625-628
7. Ito, M.; Kon, M.; Ikeda, N.; Ishizaki, M.; Ugajin, Y.; Sekine, N. Trans. Inst. Electron., Inf. Commun. Eng., Sect. E 2007, E90-C, 2105-2111
8. Sung, M.-C.; Lee, H.-N.; Kim, C. N.; Kang, S. K.; Kim, D. Y.; Kim, S.-J.; Kim, S. K.; Kim, S.-K.; Kim, H.-G.; Kim, S.-T. Proc. Int. Meet. Inf. Disp. 2007, 133-136
9. Lee, H. N.; Kyung, J. W.; Kang, S. K.; Kim, D. Y.; Sung, M. C.; Kim, S. J.; Kim, C. N.; Kim, H. G.; Kim, S. T. Proc. Int. Disp. Workshop 2006, 663-663
10. Jeong, J. K. Semicond. Sci. Technol. 2011, 26, 034008
11. Kamiya, T.; Nomura, K.; Hosono, H. Sci. Technol. Adv. Mater. 2010, 11, 044305
12. Kim, C.-J.; Kim, S.; Lee, J.-H.; Park, J.-S.; Kim, S.; Park, J.; Lee, E.; Lee, J.; Park, Y.; Kim, J. H.; Shin, S. T.; Chung, U.-I. Appl. Phys. Lett. 2009, 95, 252103
13. Jeong, W. H.; Kim, G. H.; Shin, H. S.; Ahn, B. D.; Kim, H. J.; Ryu, M.-K.; Park, K.-B.; Seon, J.-B.; Lee, S. Y. Appl. Phys. Lett. 2010, 96, 093503
14. Lee, S.; Kim, S.; Jeon, Y. W.; Kim, D. M.; Kim, D. H.; Lee, J.-H.; Ahn, B. D.; Park, S. Y.; Park, J.-H.; Kim, J. H.; Park, J. Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 2010, 41, 1389-1392
15. Park, J. C.; Kim, S.; Kim, S.; Kim, C.; Song, I.; Park, Y.; Jung, U.-I.; Kim, D. H.; Lee, J.-S. Adv. Mater. 2010, 22, 5512-5516
16. Yaglioglu, B.; Yeom, H. Y.; Beresford, R.; Paine, D. C. Appl. Phys. Lett. 2006, 89, 062103
17. Fortunato, E.; Barquinha, P.; Gon̈alves, G.; Pereira, L.; Martins, R. Solid-State Electron. 2008, 52, 443-448
18. Banger, K. K.; Yamashita, Y.; Mori, K.; Peterson, R. L.; Leedham, T.; Rickard, J.; Sirringhaus, H. Nat. Mater. 2011, 10, 45-50
19. Kamiya, T.; Nomura, K.; Hirano, M.; Hosono, H. Phys. Status Solidi C 2008, 5, 3098-3100
20. Kamiya, T.; Nomura, K.; Hosono, H. J. Disp. Technol. 2009, 5, 273-288
21. Lee, S.; Park, S.; Kim, S.; Jeon, Y. W.; Jeon, K.; Park, J.-H.; Park, J.; Song, I.; Kim, C. J.; Park, Y.; Kim, D. M.; Kim, D. H. IEEE Electron Device Lett. 2010, 31, 231-233
22. ATLAS Device Simulation Software User's Manual; Silvaco: Santa Clara, CA, 2005.