SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 6, 2010, Pages

The impact of device configuration on the photon-enhanced negative bias thermal instability of GaInZnO thin film transistors

(11) Kwon, Jang Yeon a Son, Kyoung Seok a Jung, Ji Sim a Lee, Kwang Hee a Park, Joon Seok a Kim, Tae Sang a Ji, Kwang Hwan b Choi, Rino b Jeong, Jae Kyeong b Koo, Bonwon a Lee, Sangyun a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNELS; DEVICE CONFIGURATIONS; GAINZNO; GALLIUM INDIUM ZINC OXIDES; NEGATIVE BIAS; OXYCHLORIDES; SUBTHRESHOLD; TEMPERATURE STRESS; THERMAL INSTABILITIES;

GALLIUM; PLASMA ETCHING; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

MOLYBDENUM;

EID: 77951149451 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3381023 Document Type: Article

Times cited : (61)

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