Effect of Zinc/Tin composition ratio on the operational stability of solution-processed Zinc-Tin-Oxide Thin-Film transistors

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 50-52

  Kim, Yong Hoon ^a   Han, Jeong In ^b   Park, Sung Kyu ^c  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Dongguk University   (South Korea)

^c Chung Ang University   (South Korea)

Author keywords

Composition ratio; operation stability; solution process; thin film transistor (TFT); zinc tin oxide (ZTO)

Indexed keywords

ATOMIC COMPOSITIONS; COMPOSITION RATIO; DEVICE PERFORMANCE; EFFECT OF ZINCS; METALLIC COMPONENT; OPERATION STABILITY; OPERATIONAL STABILITY; OXIDATION POTENTIALS; SOLUTION PROCESS; SOLUTION-PROCESSED; THRESHOLD VOLTAGE SHIFTS; UNDER GATE; ZINC-TIN-OXIDE (ZTO);

OXIDE FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; STABILITY; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TINNING; ZINC;

TIN;

EID: 84655164738     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2171913     Document Type: Article

References (17)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004. (Pubitemid 39585210)
2. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering," Appl. Phys. Lett., vol. 89, no. 11, p. 112 123, Sep. 2006.
3. S. Yang, D. H. Cho, M. K. Ryu, S. H. K. Park, C. S. Hwang, J. Jang, and J. K. Jeong, "Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer," Appl. Phys. Lett., vol. 96, no. 21, p. 213 511, May 2010.
4. J. W. Choi, J. I. Kim, S. H. Kim, and J. Jang, "Highly reliable amorphous silicon gate driver using stable center-offset thin-film transistors," IEEE Trans. Electron Devices, vol. 57, no. 9, pp. 2330-2334, Sep. 2010.
5. K. H. Kim, Y. H. Kim, H. J. Kim, J. I. Han, and S. K. Park, "Fast and stable solution-processed transparent oxide thin-film transistor circuits," IEEE Electron Device Lett., vol. 32, no. 4, pp. 524-526, Apr. 2011.
6. C. Li, Y. Li, Y. Wu, B. S. Ong, and R. Loutfy, "Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors," J. Mater. Chem., vol. 19, no. 11, pp. 1626-1634, 2009.
7. P. K. Nayak, J. Jang, C. Lee, and Y. Hong, "Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors," Appl. Phys. Lett., vol. 95, no. 19, p. 193 503, Nov. 2009.
8. S. Seo, C. G. Choi, Y. H. Hwang, and B. Bae, "High performance solutionprocessed amorphous zinc tin oxide thin film transistor," J. Phys. D, Appl. Phys., vol. 42, no. 3, p. 035 106, Feb. 2009.
9. Y. H. Kim, M. K. Han, J. I. Han, and S. K. Park, "Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc- oxide thin-film transistors," IEEE Trans. Electron Devices, vol. 57, no. 5, pp. 1009-1014, May 2010.
10. C. W. Chen, T. C. Chang, P. T. Liu, H. Y. Lu, K. C. Wang, C. S. Huang, C. C. Ling, and T. Yuen, "High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications," IEEE Electron Device Lett., vol. 26, no. 10, pp. 731-733, Oct. 2005.
11. J. K. Jeong, H. W. Yang, J. H. Jeong, Y. G. Mo, and H. D. Kim, "Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors," Appl. Phys. Lett., vol. 93, no. 12, pp. 123508-1-123508-3, Sep. 2008.
12. J. K. Jeong, "The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays," Semicond. Sci. Technol., vol. 26, no. 3, pp. 034008-034017, Mar 2011.
13. W. Park, W. K. Hong, G. Jo, G. Wang, M. Choe, J. Maeng, Y. H. Kahng, and T. Lee, "Tuning of operation mode of ZnO nanowire field effect transistors by solvent-driven surface treatment," Nanotechnology, vol. 20, no. 47, p. 475702, Nov. 2009.
14. T. Kamiya, K. Nomura, and H. Hosono, "Present status of amorphous In-Ga-Zn-O thin-film transistors," Sci. Technol. Adv. Mater., vol. 11, no. 4, p. 044305, 2010.
15. G. E. Totten, S. R. Westbrook, and R. J. Shah, Fuels and Lubricants Handbook: Technology, Properties, Performance, and Testing, 1st ed. West Conshohocken, PA: ASTM International, 2003.
16. Y. Jeong, K. Song, D. Kim, C. Y. Koo, and J. Moon, "Bias stress stability of solution-processed zinc tin oxide thin-film transistors," J. Electrochem. Soc., vol. 156, no. 11, pp. H808-H812, 2009.
17. R. B. M. Cross and M. M. De Souza, "The effect of gate-bias stress and temperature on the performance of ZnO thin-film transistors," IEEE Trans. Dev. Mater. Reliab., vol. 8, no. 2, pp. 277-282, Jun. 2008.