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Volumn 159, Issue 5, 2012, Pages

The deterioration of a-IGZO TFTs owing to the copper diffusion after the process of the sourcedrain metal formation

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; COPPER DIFFUSION; DEVICE SIMULATORS; INDIUM GALLIUM ZINC OXIDES (IGZO); SOURCE-DRAIN; THIN-FILM TRANSISTOR (TFTS); TRANSFER CURVES;

EID: 84859346140     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.025206jes     Document Type: Article
Times cited : (83)

References (25)
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    • 10.1063/1.351809
    • S. Luan and G. W. Neudeck, J. Appl. Phys., 72 (2), 766 (1992). 10.1063/1.351809
    • (1992) J. Appl. Phys. , vol.72 , Issue.2 , pp. 766
    • Luan, S.1    Neudeck, G.W.2
  • 16
    • 0026137471 scopus 로고
    • (April). 10.1143/JJAP.30.703
    • Y. Kanai, J. Appl. Phys., 30 (4), 703 (April 1991). 10.1143/JJAP.30.703
    • (1991) J. Appl. Phys. , vol.30 , Issue.4 , pp. 703
    • Kanai, Y.1
  • 24
  • 25
    • 0020588118 scopus 로고
    • 10.1016/0038-1101(83)90159-4
    • N. Toyama, Solid State Electronics, 26 (1), 37 (1983). 10.1016/0038-1101(83)90159-4
    • (1983) Solid State Electronics , vol.26 , Issue.1 , pp. 37
    • Toyama, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.