Facilitation of the four-mask process by the double-layered Ti/Si barrier metal for oxide semiconductor TFTs

Journal of Information Display

Volumn 13, Issue 2, 2012, Pages 61-66

  Hino, Aya ^a   Maeda, Takeaki ^a   Morita, Shinya ^a   Kugimiya, Toshihiro ^a  

^a KOBE STEEL LTD   (Japan)

Author keywords

back channel etch type TFT; barrier layer; four mask process; oxide TFT

Indexed keywords

BACK-CHANNEL-ETCH-TYPE TFT; BARRIER LAYERS; BARRIER METALS; BARRIER STRUCTURES; FOUR-MASK PROCESS; ION MASS SPECTROSCOPY; MASS PRODUCTION; OXIDE SEMICONDUCTOR; SI LAYER; TFT PROCESS; THERMAL-ANNEALING; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS; WET ETCHING;

MASS SPECTROMETRY;

EID: 84863442188     PISSN: 15980316     EISSN: 21581606     Source Type: Journal    
DOI: 10.1080/15980316.2012.673509     Document Type: Article

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