High mobility thin film transistors with transparent ZnO channels

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 4 A, 2003, Pages

  Nishii, Junya ^a   Hossain, Faruque M ^a,b   Takagi, Shingo ^a,b   Aita, Tetsuya ^b   Saikusa, Koji ^b   Ohmaki, Yuji ^a   Ohkubo, Isao ^b   Kishimoto, Shuya ^a   Ohtomo, Akira ^a   Fukumura, Tomoteru ^a   Matsukura, Fumihiro ^a   Ohno, Yuzo ^a   Koinuma, Hideomi ^b,c   Ohno, Hideo ^a   Kawasaki, Masashi ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

CaHfOx; Field effect mobility; Pulsed laser deposition; TFT; ZnO

Indexed keywords

AMORPHOUS MATERIALS; CALCIUM COMPOUNDS; GATES (TRANSISTOR); LIQUID CRYSTAL DISPLAYS; PULSED LASER DEPOSITION; SEMICONDUCTING POLYMERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SUBSTRATES; TEMPERATURE; ZINC OXIDE;

AMORPHOUS SILICON NITRIDE GATE INSULATOR; BUFFER LAYER; FIELD EFFECT MOBILITY; HIGH MOBILITY THIN FILM TRANSISTOR;

THIN FILM TRANSISTORS;

EID: 0037708293     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l347     Document Type: Letter

References (15)

1. T. Minami: Mater. Res. Soc. Bull. August (2000) 38.
2. G. Sberveglieri: Sens. & Actuat. B 23 (1995) 103.
3. D. R. Clarke: J. Am. Ceram. Soc. 82 (1999) 485.
4. Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma and Y. Segawa: Appl. Phys. Lett. 72 (1998) 3270.
5. H. Ohta, M. Orita, M. Hirano and H. Hosono: J. Appl. Phys. 89 (2001) 5720.
6. A. Tsukazaki, H. Saito, K. Tamura, M. Ohtani, H. Koinuma, M. Sumiya, S. Fuke, T. Fukumura and M. Kawasaki: Appl. Phys. Lett. 81 (2002) 235.
7. G. F. Boesen and J. E. Jacobs: Proc. IEEE (IEEE, New York, 1968) p. 2094.
8. M. W. Prins, K.-O. Grosse-Holz, G. Müller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening and R. M. Wolf: Appl. Phys. Lett. 68 (1996) 3650.
9. Y. Ohya, T. Niwa, T. Ban and Y. Takahashi: Jpn. J. Appl. Phys. 40 (2001) 297.
10. R. L. Hoffman, B. J. Norris and J. F. Wager: Appl. Phys. Lett. 82 (2003) 733.
11. M. Kawasaki and H. Ohno: Japanese Patent 3276930 (2002), filed in Nov. 1998.
12. M. Kawasaki et al.: Ext. Abstr. Int. Conf. Solid State Devices & Materials (2000) p. 128.
13. T. Aita, J. Nishii, Y. Ohmaki, S. Kishimoto, Y. Ohno, F. Matsukura, H. Koinuma, H. Ohno and M. Kawasaki: Ext. Abstr. (61th Fall Meet. 2000); Japan Society of Applied Physics and Related Societies, 5p-Z10.
14. C. A. Dimitriadis: Appl. Phys. Lett. 67 (1995) 3738.
15. F. M. Hossain: in preparation for publication.