Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors

Scientific Reports

Volumn 3, Issue , 2013, Pages

  Kim, Hyun Suk ^a   Jeon, Sang Ho ^b   Park, Joon Seok ^a   Kim, Tae Sang ^a   Son, Kyoung Seok ^a   Seon, Jong Baek ^a   Seo, Seok Jun ^a   Kim, Sun Jae ^a   Lee, Eunha ^a   Chung, Jae Gwan ^a   Lee, Hyungik ^a   Han, Seungwu ^b   Ryu, Myungkwan ^a   Lee, Sang Yoon ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANION; NITROGEN; OXIDE; OXYGEN; ZINC OXIDE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR; X RAY CRYSTALLOGRAPHY;

ANIONS; CRYSTALLOGRAPHY, X-RAY; NITROGEN; OXIDES; OXYGEN; SEMICONDUCTORS; TRANSISTORS, ELECTRONIC; ZINC OXIDE;

EID: 84876534167     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep01459     Document Type: Article

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