Effects of etching residue on positive shift of threshold voltage in amorphous indium-zinc-oxide thin-film transistors based on back-channel-etch structure

IEEE Transactions on Electron Devices

Volumn 61, Issue 1, 2014, Pages 92-97

  Luo, Dongxiang ^a,b   Xu, Hua ^a,b   Li, Min ^a,b   Tao, Hong ^a,b   Wang, Lei ^a,b   Peng, Junbiao ^b,c   Xu, Miao ^a,c  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^b South China University of Technology   (China)

^c Guangzhou New Vision Optoelectronic Co Ltd   (China)

Author keywords

Back channel etch (bce); indium zinc oxide (izo); oxide semiconductors; thin film transistors (tfts); threshold voltage

Indexed keywords

ELECTRONIC PROPERTIES; ETCHING; INDIUM; INTERFACE STATES; MOLYBDENUM OXIDE; THIN FILM TRANSISTORS; TRANSISTORS; ZINC;

BACK-CHANNEL-ETCH (BCE); CHARACTERISTICS TEST; HYSTERESIS PHENOMENON; INDIUM ZINC OXIDES; OXIDE SEMICONDUCTOR; SOURCE/DRAIN ELECTRODES; THIN-FILM TRANSISTOR (TFTS); TRANSFER CHARACTERISTICS;

THRESHOLD VOLTAGE;

EID: 84891538880     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2292552     Document Type: Article

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