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Volumn 100, Issue 11, 2012, Pages

Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT TRANSFER; ELECTRICAL CHARACTERIZATION; HIGH-PERFORMANCE CIRCUITS; INVERTER CIRCUIT; PARASITIC RESISTANCES; SOURCE/DRAIN ELECTRODES; THIN FILM TRANSISTORS (TFT); THIN-FILM TRANSISTOR (TFTS); TRANSFER CHARACTERISTICS;

EID: 84859970448     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694273     Document Type: Article
Times cited : (50)

References (14)
  • 5
    • 0942277277 scopus 로고    scopus 로고
    • 10.1016/j.microrel.2003.10.020
    • C. S. Hau-Riege, Microelectron. Reliab. 44, 195 (2004). 10.1016/j.microrel.2003.10.020
    • (2004) Microelectron. Reliab. , vol.44 , pp. 195
    • Hau-Riege, C.S.1
  • 12
    • 84859998331 scopus 로고    scopus 로고
    • Scaling behavior of a-IGZO TFTs with transparent a-IZO source/drain electrodes
    • (in press).
    • J. Jeong, G. J. Lee, J. Kim, and B. Choi, Scaling behavior of a-IGZO TFTs with transparent a-IZO source/drain electrodes., J. Phys. D:Appl. Phys. (in press).
    • J. Phys. D:Appl. Phys.
    • Jeong, J.1    Lee, G.J.2    Kim, J.3    Choi, B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.