Low-temperature fabrication and characteristics of lanthanum indium zinc oxide thin-film transistors

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 685-687

  Park, Jae Chul ^a   Kim, Sang Wook ^a   Kim, Chang Jung ^a   Lee, Ho Nyeon ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Soonchunhyang University   (South Korea)

Author keywords

Indium; Lanthanum; Thin film transistors (TFTs); Zinc

Indexed keywords

COSPUTTERING; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; IONIC BONDS; LOW-TEMPERATURE FABRICATION; RADIO FREQUENCIES; THERMAL-ANNEALING; THIN FILM TRANSISTORS (TFT); THIN-FILM TRANSISTOR (TFTS);

INDIUM; LANTHANUM; THIN FILM TRANSISTORS; ZINC;

LANTHANUM ALLOYS;

EID: 84860360644     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2188849     Document Type: Article

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