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Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

(3) Ye, Yan a Lim, Rodney a White, John M a

a APPLIED MATERIALS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; DIFFERENT MECHANISMS; FILM STABILITY; HIGH MOBILITY; METAL COMPOUNDS; MULTI-METALS; MULTICOMPONENT METAL OXIDE; NANOCRYSTALLINE FILMS; OXYNITRIDES; PROCESS YIELD; REACTIVE SPUTTERING PROCESS; ZNO;

AMORPHOUS FILMS; BIOACTIVITY; CARRIER CONCENTRATION; HALL MOBILITY; METALLIC COMPOUNDS; MOS DEVICES; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

GALVANOMAGNETIC EFFECTS;

EID: 70350089441 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236663 Document Type: Article

Times cited : (128)

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