Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor

Scientific Reports

Volumn 4, Issue , 2014, Pages

  Jung, Hong Yoon ^a   Kang, Youngho ^b   Hwang, Ah Young ^a   Lee, Chang Kyu ^a   Han, Seungwu ^b   Kim, Dae Hwan ^c   Bae, Jong Uk ^c   Shin, Woo Sup ^c   Jeong, Jae Kyeong ^a  

^a Inha University   (South Korea)

^b Seoul National University   (South Korea)

^c LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84892881688     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep03765     Document Type: Article

References (30)

1. Nomura, K. et al. Room-Temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488-492 (2004 (Pubitemid 39585210)
2. Kim, M. et al.High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper. Appl. Phys. Lett. 90, 212114 (2007
3. Jeong, J. K., Chung, H-J., Mo, Y. G. & Kim, H. D. Comprehensive study on the transport mechanism of amorphous indium-gallium-zinc oxide transistors. J. Electrochem. Soc. 155, H873-877 (2008
4. Jeong, J. K. et al. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Appl. Phys. Lett. 91, 113505 (2007
5. Ji, K. H. et al. Comparative study on light-induced bias stress instability of IGZO transistors with SiNx and SiO2 Gate Dielectrics. IEEE Electron Device Lett. 31, 1404-1406 (2010
6. Chowdhury, M. D. H., Migliorato, P. & Jang, J. Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors. Appl. Phys. Lett. 97, 173506 (2010
7. Ji, K. H. et al. Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors. Appl. Phys. Lett. 98, 103509 (2011
8. Yang, S. et al. Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment. Appl. Phys. Lett. 99, 102103 (2011
9. Kim, J. H., Kim, U. K., Chung, Y. J. & Hwang, C. S. Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer. Physica Status Solidi-Rapid Research Lett. 5, 178-180 (2011
10. Jeong, J. K. et al. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Appl. Phys. Lett. 93, 123508 (2008
11. Yang, B. S. et al. Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors. Appl. Phys. Lett. 98, 122110 (2011
12. Kwon, J-Y. et al. Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors: A cation combinatorial approach. J. Electrochem. Soc. 158, H433-437 (2011
13. Kamiya, T., Nomura, K. & Hosono, H. Present status of amorphous In-Ga-Zn-O thin-film transistors. Sci. Technol. Adv. Mater. 11, 044305 (2010
14. Ryu, B.,Noh, H-K., Choi, E-A. & Chang, K. J.O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Appl. Phys. Lett. 97, 022108 (2010
15. Kim, S. I. et al. High performance oxide thin film transistors with double active layers. in IEDM Tech. Dig. pp. 73-74 (2008
16. Park, J. C. et al. Highly stable transparent amorphous oxide semiconductor thinfilm transistors having double-stacked active layers. Adv. Mater. 22, 5512-5516 (2010
17. Chong, E. et al. Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer. Thin Solid Films 519, 4347-4350 (2011
18. Kim, H-S. et al. Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability. ACS Appl. Mater. Interfaces 4, 5416-5421 (2012
19. Kim, J-I. et al. Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-Thin InSnO layer at the gate insulator/channel interface. Appl. Phys. Lett. 99, 122102 (2011
20. Kanichi, J. & Martin, S. in Thin Film Transistors (Kagan, C. Y. & Andry, P. (ed.)) 87 (Dekker, New York, 2003
21. Ji, K. H. et al. The effect of density-of-state on the temperature and gate biasinduced instability of InGaZnO thin film transistors. J. Electrochem. Soc. 157, H983-986 (2010
22. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169 (1996
23. Kang, Y. et al. Microscopic origin of universal quasilinear band structures of transparent conducting oxides. Phys. Rev. Lett. 108, 196404 (2012
24. Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758 (1999
25. Noh, H. K. et al. Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors. Phys. Rev. B 84, 115205 (2011
26. Á goston, P., Albe, K., Nieminen, R.M. & Puska, M. J. Intrinsic n-Type behavior in transparent conducting oxides: A comparative hybrid-functional study of In2O3, SnO2, and ZnO. Phys. Rev. Lett. 103, 245501 (2009
27. Nahm, H-H., Kim, Y-S. & Kim, D. H. Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state. Phys. Status Solidi B 249, 1277 (2012
28. Fan, J. C. C. &Goodenough, J. B. X-ray photoemission spectroscopy studies of Sndoped indium-oxide films. J. Appl. Phys. 48, 3524-3531 (1997
29. Ishida, T., Kobayashi, H. & Nakato, Y. Stuructures and properties of electronbeam-evaporated indium tin oxide-films as studied by x-ray photoelectronspectroscopy and work-function measurements. J. Appl. Phys. 73, 4344-4350 (1993
30. Major, S., Kumar, S., Bhatnagar, M. & Chopra, K. L. Effect of hydrogen plasma treatment on transparent conducting oxides. Appl. Phys. Lett. 49, 394-396 (1986