High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1248-1250

  Park, Joon Seok ^a   Kim, Tae Sang ^a   Son, Kyoung Seok ^a   Lee, Kwang Hee ^a   Jung, Ji Sim ^b   Maeng, Wan Joo ^a   Kim, Hyun Suk ^a   Kim, Eok Su ^a   Park, Kyung Bae ^a   Seon, Jong Baek ^a   Kwon, Jang Yeon ^b   Ryu, Myung Kwan ^a   Lee, Sangyoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Etch stopper (ES); hafnium indium zinc oxide (HIZO); thin film transistor (TFT)

Indexed keywords

BIAS STRESS; DEFECT STATE; DEVICE PERFORMANCE; ETCH PROCESS; ETCH STOPPER (ES); EXPONENTIAL ANALYSIS; FIELD-EFFECT MOBILITIES; HIGH TEMPERATURE; INDIUM ZINC OXIDES; NEGATIVE BIAS; STOPPER LAYERS; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFT);

HAFNIUM; HAFNIUM OXIDES; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78049299108     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2065793     Document Type: Article

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