Hexagonal a-Si:H TFTs: A new advanced technology for flat-paneld displays

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 329-336

  Lee, Hojin ^a   Yoo, Juhn Suk ^b   Kim, Chang Dong ^b   Kang, In Byeong ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b LG Display Co Ltd   (South Korea)

Author keywords

Hexagonal thin film transistor (HEX TFT); Hydrogenate amorphous silicon (a Si:H); Large channel width; Multiple transistor; Parallel connected

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; LIQUID CRYSTAL DISPLAYS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING SILICON;

ACTIVE-MATRIX ORGANIC LIGHT-EMITTING DISPLAY; HEXAGONAL THIN-FILM TRANSISTOR; MULTIPLE TRANSISTOR;

THIN FILM TRANSISTORS;

EID: 37749041087     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911090     Document Type: Article

References (9)

1. V. M. Da Costa and R. A. Martin, "Amorphous silicon shift register for addressing output drivers," IEEE J. Solid-State Circuits, vol. 29, no. 5, pp. 596-600, May 1994.
2. N. Matsuki, Y. Abiko, K. Miyazaki, M. Kobayashi, H. Fujioka, and H. Koinuma, "Field-effect a-Si:H solar cells with transparent conductive oxide comb-shaped electrodes," Thin Solid Films, vol. 486, no. 1/2, pp. 210-213, Aug. 2005.
3. H. Wakai, N. Yamamura, S. Sato, and M. Kanbara, "Thin film transistor," U.S. Patent 5 055 899, Oct. 8, 1991.
4. K. Wu, S. Pan, D. Chin, and J. Shaw, "Channel length and width effects on NMOS transistor degradation under constant positive gate-voltage stressing," in IEDM Tech. Dig., 1991, pp. 735-738.
5. K.-S. Shin, J.-H. Lee, W.-K. Lee, S.-G. Park, and M.-K. Han, "Bias stress stability of asymmetric source-drain a-Si:H thin film transistors," in Proc. Mater. Res. Soc. Symp., 2006, vol. 910, pp. 597-602. 0910-A22-02.
6. H. Lee, J. S. Yoo, C. D. Kim, I. J. Chung, and J. Kanicki, "Asymmetric electrical properties of Corbino a-Si:H TFT and concepts of its application to flat panel displays," IEEE Trans. Electron Devices vol. 54, no. 4, pp. 654-662, Apr. 2007.
7. D. Probat, "The use of thin silicon films in flat panel displays," in Proc. Mater. Sci. Forum, 2004, vol. 455, pp. 56-63.
8. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987.
9. A. T. Hatzopoulos, N. Arpatzanis, D. H. Tassis, C. A. Dimitriadis, F. Templier, M. Oudwan, and G. Kamarinos, "Effect of channel width on the electrical characteristics of amorphous/nanocrystalline silicon bilayer thin-film transistors," IEEE Trans. Electron Devices, vol. 54, no. 5, pp. 1265-1269, May 2007.