메뉴 건너뛰기




Volumn 3, Issue , 2013, Pages

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84884916020     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep02737     Document Type: Article
Times cited : (78)

References (44)
  • 1
    • 0038136910 scopus 로고    scopus 로고
    • Transparent electronics
    • Wager, J. F. Transparent electronics. Science 300, 1245-1246 (2003).
    • (2003) Science , vol.300 , pp. 1245-1246
    • Wager, J.F.1
  • 3
    • 9744248669 scopus 로고    scopus 로고
    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • Nomura, K. et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488-482 (2004).
    • (2004) Nature , vol.432 , pp. 488-482
    • Nomura, K.1
  • 4
    • 16244382410 scopus 로고    scopus 로고
    • Fully transparent ZnO thin-film transistor produced at room temperature
    • Fortunato, E. M. C. et al. Fully transparent ZnO thin-film transistor produced at room temperature. Adv. Mater. 17, 590-594 (2005).
    • (2005) Adv. Mater , vol.17 , pp. 590-594
    • Fortunato, E.M.C.1
  • 5
    • 60349091512 scopus 로고    scopus 로고
    • Transparent and photo-stable ZnO thin film transistors to drive an active matrix organic-light-emitting diode display panel
    • Park, K. et al. Transparent and photo-stable ZnO thin film transistors to drive an active matrix organic-light-emitting diode display panel. Adv. Mater. 21, 678-682 (2009).
    • (2009) Adv. Mater , vol.21 , pp. 678-682
    • Park, K.1
  • 6
    • 39049125192 scopus 로고    scopus 로고
    • High mobility and low threshold voltage transparent thin films transistors based on amorphous indium zinc oxide semiconductors
    • Fortunato, E. M. C., Barquinha, P., Goncalves, G., Pereira, L. & Martins, R. High mobility and low threshold voltage transparent thin films transistors based on amorphous indium zinc oxide semiconductors. Solid-State Electron. 52, 443-448 (2008).
    • (2008) Solid-State Electron , vol.52 , pp. 443-448
    • Fortunato, E.M.C.1    Barquinha, P.2    Goncalves, G.3    Pereira, L.4    Martins, R.5
  • 7
    • 13544269370 scopus 로고    scopus 로고
    • High mobility transparent thin-film transistors with amorphous zinc thin oxide channel layer
    • Chiang, H. Q.,Wager, J. F., Hoffman, R. L., Jeong, J. and Keszler, D. A. High mobility transparent thin-film transistors with amorphous zinc thin oxide channel layer. Appl. Phys. Lett. 86, 013503 (2005).
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 013503
    • Chiang, H.Q.1    Wager, J.F.2    Hoffman, R.L.3    Jeong, J.4    Keszler, D.A.5
  • 8
    • 33745435681 scopus 로고    scopus 로고
    • Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
    • Hosono, H. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application. J. Non-Cryst. Solids. 352, 851-858 (2006).
    • (2006) J. Non-Cryst. Solids , vol.352 , pp. 851-858
    • Hosono, H.1
  • 9
    • 78149382528 scopus 로고    scopus 로고
    • Present status of amorphous In-Ga-Zn-O thin-film transistors
    • Kamiya, T., Nomura, K. & Hosono, H. Present status of amorphous In-Ga-Zn-O thin-film transistors. Sci. Technol. Adv. Mater. 11, 044305 (2010).
    • (2010) Sci. Technol. Adv. Mater , vol.11 , pp. 044305
    • Kamiya, T.1    Nomura, K.2    Hosono, H.3
  • 10
    • 51349141239 scopus 로고    scopus 로고
    • Bias-stress-induced stretchedexponential time dependence of threshold voltage shift in InGaZnO thin film transistors
    • Lee, J., Cho, I.-T., Lee, J.-H. & Kwon, H.-I. Bias-stress-induced stretchedexponential time dependence of threshold voltage shift in InGaZnO thin film transistors. Appl. Phys. Lett. 93, 093504 (2008).
    • (2008) Appl. Phys. Lett , vol.93 , pp. 093504
    • Lee, J.1    Cho, I.-T.2    Lee, J.-H.3    Kwon, H.-I.4
  • 11
    • 38549145327 scopus 로고    scopus 로고
    • Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
    • Suresh, A. and Muth, J. F. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. Appl. Phys. Lett. 92, 033502 (2008).
    • (2008) Appl. Phys. Lett , vol.92 , pp. 033502
    • Suresh, A.1    Muth, J.F.2
  • 12
    • 79954618666 scopus 로고    scopus 로고
    • Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors
    • Chowdhury, M. D. H., Piero, M. & Jang, J. Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc- oxide thin-film-transistors. Appl. Phys. Lett. 98, 153511 (2011).
    • (2011) Appl. Phys. Lett , vol.98 , pp. 153511
    • Chowdhury, M.D.H.1    Piero, M.2    Jang, J.3
  • 13
    • 36049015883 scopus 로고    scopus 로고
    • The influence of visible light on transparent zinc thin oxide thin film transistors
    • Go?rrn, P., Lehnhardt, M., Riedl, T. & Kowalsky, W. The influence of visible light on transparent zinc thin oxide thin film transistors. Appl. Phys. Lett. 91, 193504 (2007).
    • (2007) Appl. Phys. Lett , vol.91 , pp. 193504
    • Gorrn, P.1    Lehnhardt, M.2    Riedl, T.3    Kowalsky, W.4
  • 14
    • 59649110307 scopus 로고    scopus 로고
    • Comparison of ultraviolet photo-filed effects between hydrogenated amorphous silicon and amorphous InGaZnO4 thin-film transistors
    • Takechi, K., Nakata, M., Eguchi, T., Yamaguchi, H. & Kaneko, S. Comparison of ultraviolet photo-filed effects between hydrogenated amorphous silicon and amorphous InGaZnO4 thin-film transistors. Japan. J. Appl. Phys. 48, 010203 (2009).
    • (2009) Japan. J. Appl. Phys , vol.48 , pp. 010203
    • Takechi, K.1    Nakata, M.2    Eguchi, T.3    Yamaguchi, H.4    Kaneko, S.5
  • 15
    • 71949092733 scopus 로고    scopus 로고
    • The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors
    • Lee, K. et al. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors. Appl. Phys. Lett. 95, 232106 (2009).
    • (2009) Appl. Phys. Lett , vol.95 , pp. 232106
    • Lee, K.1
  • 16
    • 77956252679 scopus 로고    scopus 로고
    • Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer
    • Yang, S. et al. Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer. Appl. Phys. Lett. 96, 213511 (2011).
    • (2011) Appl. Phys. Lett , vol.96 , pp. 213511
    • Yang, S.1
  • 17
    • 79251542694 scopus 로고    scopus 로고
    • Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor
    • Oh, H. et al. Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor. Appl. Phys. Lett. 98, 033504 (2011).
    • (2011) Appl. Phys. Lett , vol.98 , pp. 033504
    • Oh, H.1
  • 18
    • 39749191514 scopus 로고    scopus 로고
    • Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
    • Park, J.-S., Jeong, J. K., Chung, H.-J., Mo, Y.-G. & Kim, H. D. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water. Appl. Phys. Lett. 92, 072104 (2008).
    • (2008) Appl. Phys. Lett , vol.92 , pp. 072104
    • Park, J.-S.1    Jeong, J.K.2    Chung, H.-J.3    Mo, Y.-G.4    Kim, H.D.5
  • 19
    • 52949097961 scopus 로고    scopus 로고
    • Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
    • Jeong, J. K., Hui, W. Y., Jeong, J. H., MO, Y.-G. & Kim, H. D. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Appl. Phys. Lett. 93, 123508 (2008).
    • (2008) Appl. Phys. Lett , vol.93 , pp. 123508
    • Jeong, J.K.1    Hui, W.Y.2    Jeong, J.H.3    Mo, Y.4    Kim, H.D.5
  • 20
    • 73449096392 scopus 로고    scopus 로고
    • Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
    • Kim, C.-J. et al. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors. Appl. Phys. Lett. 95, 252103 (2009).
    • (2009) Appl. Phys. Lett , vol.95 , pp. 252103
    • Kim, C.-J.1
  • 21
    • 80155140304 scopus 로고    scopus 로고
    • Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
    • Chong, H. Y.,Han, K. H.,No, Y. S. & Kim, T.W. Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process. Appl. Phys. Lett. 99, 161908 (2011).
    • (2011) Appl. Phys. Lett , vol.99 , pp. 161908
    • Han, C.H.1    No Y S, K.2    Kim, T.W.3
  • 22
    • 78650380269 scopus 로고    scopus 로고
    • Highly stable transparent amorphous oxide semiconductor thinfilm transistors having double-stacked active layers
    • Park, J. C. et al. Highly stable transparent amorphous oxide semiconductor thinfilm transistors having double-stacked active layers. Adv. Mater. 22, 5512-5516 (2010).
    • (2010) Adv. Mater , vol.22 , pp. 5512-5516
    • Park, J.C.1
  • 23
    • 80053389485 scopus 로고    scopus 로고
    • Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface
    • Kim, J. et al. Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface. Appl. Phys. Lett. 99, 122102 (2011).
    • (2011) Appl. Phys. Lett , vol.99 , pp. 122102
    • Kim, J.1
  • 24
    • 0037179671 scopus 로고    scopus 로고
    • Artificial chargemodulationin atomic-scale perovskite titanate superlattice
    • Ohtomo, A., Muller, D. A., Grazul, J. L. & Hwang, H. Y. Artificial chargemodulationin atomic-scale perovskite titanate superlattice. Nature 419, 378-380 (2002).
    • (2002) Nature , vol.419 , pp. 378-380
    • Ohtomo, A.1    Muller, D.A.2    Grazul, J.L.3    Hwang, H.Y.4
  • 25
    • 0842307486 scopus 로고    scopus 로고
    • A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
    • Ohtomo, A. & Hwang, H. Y. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface. Nature 427, 423-426 (2004).
    • (2004) Nature , vol.427 , pp. 423-426
    • Ohtomo, A.1    Hwang, H.Y.2
  • 26
    • 77958483248 scopus 로고    scopus 로고
    • Observation of the fractional quantum Hall effect in an oxide
    • Tsukazaki, A. et al. Observation of the fractional quantum Hall effect in an oxide. Nature Mater. 9, 889-893 (2010).
    • (2010) Nature Mater , vol.9 , pp. 889-893
    • Tsukazaki, A.1
  • 27
    • 80052789291 scopus 로고    scopus 로고
    • Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures
    • Chen, Y. et al. Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures. Nano Lett. 11, 3774-3778 (2011).
    • (2011) Nano Lett , vol.11 , pp. 3774-3778
    • Chen, Y.1
  • 28
    • 84885873602 scopus 로고
    • Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
    • Sandroff, C. J., Nottenburg, R. N., Bischoff, J.-C. & Bhat, R. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation. Appl. Phys. Lett. 38, 550 (1981).
    • (1981) Appl. Phys. Lett , vol.38 , pp. 550
    • Sandroff, C.J.1    Nottenburg, R.N.2    Bischoff, J.-C.3    Bhat, R.4
  • 31
    • 77952997651 scopus 로고    scopus 로고
    • High-mobility low-temperature ZnO transistors with low-voltage operation
    • Bong, H. et al. High-mobility low-temperature ZnO transistors with low-voltage operation. Appl. Phys. Lett. 96, 192115 (2010).
    • (2010) Appl. Phys. Lett , vol.96 , pp. 192115
    • Bong, H.1
  • 32
    • 33645542322 scopus 로고    scopus 로고
    • High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition
    • Carcia, P. F., Mclean, R. S. & Reilly, M. H. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Appl. Phys. Lett. 88, 123509 (2006).
    • (2006) Appl. Phys. Lett , vol.88 , pp. 123509
    • Carcia, P.F.1    McLean, R.S.2    Reilly, M.H.3
  • 33
    • 38349143370 scopus 로고    scopus 로고
    • Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
    • Huby, N., Ferrari, S., Godlewski, M. and Osinniy,V. Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition. Appl. Phys. Lett. 92, 023502 (2008).
    • (2008) Appl. Phys. Lett , vol.92 , pp. 023502
    • Huby, N.1    Ferrari, S.2    Godlewski, M.3    Osinniy, V.4
  • 34
    • 0005098720 scopus 로고
    • The reaction of Hexamethyldisilazane and subsequent oxidation of trimethylsilyl groups on silica studied by solid-sate NMR and FTIR
    • Haukka, S. & Root, A. The reaction of Hexamethyldisilazane and subsequent oxidation of trimethylsilyl groups on silica studied by solid-sate NMR and FTIR. J. Phys. Chem. 98, 1695-1703 (1994).
    • (1994) J. Phys. Chem , vol.98 , pp. 1695-1703
    • Haukka, S.1    Root, A.2
  • 35
    • 77954247557 scopus 로고    scopus 로고
    • Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition
    • Ahn, C. H. et al. Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition. Surf. Interface Anal. 42, 955-958 (2010).
    • (2010) Surf. Interface Anal , vol.42 , pp. 955-958
    • Ahn, C.H.1
  • 36
    • 84868709159 scopus 로고    scopus 로고
    • Nucleation and growth modes of ALD ZnO
    • Baji, Z. et al.Nucleation and growth modes of ALD ZnO. Crystal Growth and design. 12, 5615-5620 (2012).
    • (2012) Crystal Growth and design , vol.12 , pp. 5615-5620
    • Baji, Z.1
  • 37
    • 36248970008 scopus 로고    scopus 로고
    • Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC
    • Tanner, C. M., Perng, Y.-C., Frewin, C., Saddow, S. E. & Chang, J. P. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC. Appl. Phys. Lett. 91, 203510 (2007).
    • (2007) Appl. Phys. Lett , vol.91 , pp. 203510
    • Tanner, C.M.1    Perng, Y.-C.2    Frewin, C.3    Saddow, S.E.4    Chang, J.P.5
  • 38
    • 59849105046 scopus 로고    scopus 로고
    • Energy-band parameters of aromic layer deposited Al2O3 and HfO2 on InxGa12xAs
    • Huang, M. L. et al. Energy-band parameters of aromic layer deposited Al2O3 and HfO2 on InxGa12xAs. Appl. Phys. Lett. 94, 052106 (2009).
    • (2009) Appl. Phys. Lett , vol.94 , pp. 052106
    • Huang, M.L.1
  • 39
    • 84880859914 scopus 로고    scopus 로고
    • Band alignment parameters of Al2O3/InSb metal-oxidesemiconductor structure and their modification with oxide deposition temperature
    • Trinh, H. D. et al. Band alignment parameters of Al2O3/InSb metal-oxidesemiconductor structure and their modification with oxide deposition temperature. Appl. Phys. Express. 6, 061201 (2013).
    • (2013) Appl. Phys. Express , vol.6 , pp. 061201
    • Trinh, H.D.1
  • 40
    • 38349105054 scopus 로고    scopus 로고
    • Interface studies of ZnO nanowire transistor using low-frequency noise and temperature-dependent I-V measurements
    • Ju, S. et al. Interface studies of ZnO nanowire transistor using low-frequency noise and temperature-dependent I-V measurements. Appl. Phys. Lett. 92, 022104-022106 (2008).
    • (2008) Appl. Phys. Lett , vol.92 , pp. 022104-022106
    • Ju, S.1
  • 41
    • 67649815926 scopus 로고    scopus 로고
    • A comparative analysis of deep level emission in ZnO layers deposited by various methods
    • Ahn, C. H., Kim, Y. Y., Kim, D. C., Mohanta, S. K. & Cho, H. K. A comparative analysis of deep level emission in ZnO layers deposited by various methods. J. Appl. Phys. 105, 013502 (2009).
    • (2009) J. Appl. Phys , vol.105 , pp. 013502
    • Ahn, C.H.1    Kim, Y.Y.2    Kim, D.C.3    Mohanta, S.K.4    Cho, H.K.5
  • 42
    • 28044471578 scopus 로고    scopus 로고
    • Nucleation and growth during Al2O3 atomic layer deposition on polymers
    • Wilson, C. A., Grubbs, R. K. & George, S. M. Nucleation and growth during Al2O3 atomic layer deposition on polymers. Chem. Mater. 17, 5625-5634 (2005).
    • (2005) Chem. Mater , vol.17 , pp. 5625-5634
    • Wilson, C.A.1    Grubbs, R.K.2    George, S.M.3
  • 43
    • 84863646260 scopus 로고    scopus 로고
    • Permeability and corrosion in ZrO2/Al2O3 nanolaminate and Al2O3 thin films grown by atomic layer deposition on polymers
    • Carcia, P. F., McLean, R. S., Li, Z. G., Reilly, M. H. and Marshall, W. J. Permeability and corrosion in ZrO2/Al2O3 nanolaminate and Al2O3 thin films grown by atomic layer deposition on polymers. J. Vac. Sci. Technol. 4, A30 (2012).
    • (2012) J. Vac. Sci. Technol , vol.4
    • Carcia, P.F.1    McLean, R.S.2    Li, Z.G.3    Reilly, M.H.4    Marshall, W.J.5
  • 44
    • 75749140059 scopus 로고    scopus 로고
    • High-performance Al-Sn-Zn-In-O thin-film transistors: Impact of passivation layer on devices stability
    • Yang, S. Y. et al. High-performance Al-Sn-Zn-In-O thin-film transistors: impact of passivation layer on devices stability. IEEE Electron Device Lett. 31, 144 (2010).
    • (2010) IEEE Electron Device Lett , vol.31 , pp. 144
    • Yang, S.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.