Bias stress stability of zinc-tin-oxide thin-film transistors with Al 2O3 gate dielectrics

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 4, 2010, Pages

  Triska, J ^a   Conley Jr , J F ^a   Presley, R ^a   Wager, J F ^a  

^a Oregon State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; STABILITY; THIN FILM TRANSISTORS; TIN; TITANIUM COMPOUNDS; ZINC;

BIAS STABILITY; BIAS STRESS; CAPPING LAYER; ELECTRON TRAPPING; INTERFACIAL LAYER; PLASMA EXPOSURE; POSITIVE BIAS; SUBTHRESHOLD SLOPE; TURN ON VOLTAGE;

GATE DIELECTRICS;

EID: 77957234556     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3455494     Document Type: Conference Paper

References (39)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) NATUAS 0028-0836 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
2. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. APPLAB 0003-6951 82, 733 (2003). 10.1063/1.1542677
3. P. F. Carcia, R. S. McLean, M. H. Reilly, and J. G. Nunes, Appl. Phys. Lett. APPLAB 0003-6951 82, 1117 (2003). 10.1063/1.1553997
4. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai, J. Appl. Phys. JAPIAU 0021-8979 93, 1624 (2003). 10.1063/1.1534627
5. P. Görrn, F. Ghaffari, T. Riedl, and W. Kowalsky, Solid-State Electron. SSELA5 0038-1101 53, 329 (2009). 10.1016/j.sse.2009.01.006
6. H. -Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, Appl. Phys. Lett. APPLAB 0003-6951 86, 013503 (2005). 10.1063/1.1843286 (Pubitemid 40219489)
7. J. B. Kim, C. Fuentes-Hernandez, W. J. Potscavage, Jr., X. -H. Zhang, and B. Kippelen, Appl. Phys. Lett. APPLAB 0003-6951 94, 142107 (2009). 10.1063/1.3118575
8. P. F. Carcia, R. S. McLean, and M. H. Reilly, Appl. Phys. Lett. APPLAB 0003-6951 88, 123509 (2006). 10.1063/1.2188379
9. J. -M. Lee, I. -T. Cho, J. -H. Lee, and H. -I. Kwon, Appl. Phys. Lett. APPLAB 0003-6951 93, 093504 (2008). 10.1063/1.2977865
10. M. S. Oh, K. Lee, J. H. Song, B. H. Lee, M. M. Sung, D. K. Hwang, and S. Im, J. Electrochem. Soc. JESOAN 0013-4651 155, H1009 (2008). 10.1149/1.2994629
11. K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. APPLAB 0003-6951 95, 013502 (2009). 10.1063/1.3159831
12. J. -M. Lee, I. -T. Cho, J. -H. Lee, W. -S. Cheong, C. -S. Hwang, and H. -I. Kwon, Appl. Phys. Lett. APPLAB 0003-6951 94, 222112 (2009). 10.1063/1.3151865
13. S. -H. K. Park, ETRI J. ZZZZZZ 1225-6463 31, 653 (2009). 10.4218/etrij.09.1209.0043
14. K. Song, D. Kim, X. -S. Li, T. Jun, Y. Jeong, and J. Moon, J. Mater. Chem. JMACEP 0959-9428 19, 8881 (2009). 10.1039/b912554j
15. M. Powell, C. Vanberkel, and J. Hughes, Appl. Phys. Lett. APPLAB 0003-6951 54, 1323 (1989). 10.1063/1.100704
16. H. Kavak and H. Shanks, Solid-State Electron. SSELA5 0038-1101 49, 578 (2005). 10.1016/j.sse.2005.01.002 (Pubitemid 40231874)
17. D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. APPLAB 0003-6951 31, 292 (1977). 10.1063/1.89674
18. D. R. Allee, IEEE Trans. Electron Devices IETDAI 0018-9383 56, 1166 (2009).
19. J. Robertson, Thin Solid Films THSFAP 0040-6090 516, 1419 (2008). 10.1016/j.tsf.2007.03.092 (Pubitemid 351172381)
20. P. Görrn, P. Hölzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, and S. Kipp, Appl. Phys. Lett. APPLAB 0003-6951 90, 063502 (2007). 10.1063/1.2458457 (Pubitemid 46247705)
21. S. -J. Seo, C. G. Choi, Y. H. Hwang, and B. -S. Bae, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 42, 035106 (2009). 10.1088/0022-3727/42/3/035106
22. W. S. Cheong, S. M. Yoon, J. H. Shin, and C. S. Hwang, J. Korean Phys. Soc. KPSJAS 0374-4884 54, 544 (2009). 10.3938/jkps.54.544
23. Y. Jeong, K. Song, D. Kim, C. Y. Koo, and J. Moon, J. Electrochem. Soc. JESOAN 0013-4651 156, H808 (2009). 10.1149/1.3212847
24. J. F. Wager, D. A. Keszler, and R. E. Presley, Transparent Electronics (Springer, New York, 2008), Chap.
25. R. Hoffman, J. Appl. Phys. JAPIAU 0021-8979 95, 5813 (2004). 10.1063/1.1712015
26. K. Hoshino, D. Hong, H. Q. Chiang, and J. F. Wager, IEEE Trans. Electron Devices IETDAI 0018-9383 56, 1365 (2009). 10.1109/TED.2009.2021339
27. See, for example, T. R. Oldham, Ionizing Radiation Effects in MOS Devices (World Scientific, Singapore, 1999), Chap.
28. R. Cross and M. De Souza, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388 8, 277 (2008). 10.1109/TDMR.2008.916307
29. J. F. Conley, Jr., " Instabilities in amorphous oxide semiconductor thin film transistors.," IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388 (in press).
30. Y. Gao, S. He, P. Alluri, M. Engelhard, A. S. Lea, J. Finder, B. Melnick, and R. L. Hance, J. Appl. Phys. JAPIAU 0021-8979 87, 124 (2000). 10.1063/1.371833
31. M. -Y. Li, Y. -Y. Chang, H. -C. Wu, C. -S. Huang, J. -C. Chen, J. -L. Lue, and S. -M. Chang, J. Electrochem. Soc. JESOAN 0013-4651 154, H967 (2007). 10.1149/1.2778861 (Pubitemid 47505048)
32. M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George, Chem. Mater. CMATEX 0897-4756 16, 639 (2004). 10.1021/cm0304546
33. J. L. van Hemmen, S. B. S. Heil, J. H. Klootwijk, F. Roozeboom, C. J. Hodson, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. JESOAN 0013-4651 154, G165 (2007). 10.1149/1.2737629 (Pubitemid 46872260)
34. A. Martin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 27, 426 (2009). 10.1116/1.3054356
35. T. H. Ning and H. N. Yu, J. Appl. Phys. JAPIAU 0021-8979 45, 5373 (1974). 10.1063/1.1663246
36. F. R. Libsch and J. Kanicki, Appl. Phys. Lett. APPLAB 0003-6951 62, 1286 (1993). 10.1063/1.108709
37. S. Zafar, A. Callegari, E. Gusev, and M. V. Fischetti, J. Appl. Phys. JAPIAU 0021-8979 93, 9298 (2003). 10.1063/1.1570933
38. P. M. Lenahan and J. F. Conley, Jr., J. Vac. Sci. Technol. B JVTBD9 1071-1023 16, 2134 (1998). 10.1116/1.590301
39. P. M. Lenahan and J. F. Conley, Jr., IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388 5, 90 (2005). 10.1109/TDMR.2005.845475 (Pubitemid 40819629)