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Applied Physics Letters

Volumn 101, Issue 11, 2012, Pages

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

(3) Heo, Jaeyeong a,b Kim, Sang Bok a Gordon, Roy G a

a HARVARD UNIVERSITY (United States)

b Chonnam National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CHARACTERS; AMORPHOUS OXIDES; ATOMIC LAYER DEPOSITED; CHANNEL LAYERS; FIELD-EFFECT MOBILITIES; GATE INSULATOR; SUBTHRESHOLD SWING; THERMAL OXIDES; ZINC TIN OXIDE;

ATOMIC LAYER DEPOSITION; THIN FILM TRANSISTORS; THIN FILMS; TIN OXIDES; ZINC;

TIN;

EID: 84866316275 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4752727 Document Type: Article

Times cited : (87)

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