Hydrogen as a cause of doping in zinc oxide

Physical Review Letters

Volumn 85, Issue 5, 2000, Pages 1012-1015

  Van De Walle, Chris G ^a,b,c  

^a PALO ALTO RESEARCH CENTER   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; HYDROGEN BONDS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

LOCAL DENSITY APPROXIMATION; WIDE BAND GAP SEMICONDUCTOR; ZINC BLEND PHASE;

ZINC OXIDE;

EID: 18244430368     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.1012     Document Type: Article

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