High performance oxide thin film transistors with double active layers

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Kim, Sun Il ^a   Kim, Chang Jung ^a   Park, Jae Chul ^a   Song, Ihun ^a   Kim, Sang Wook ^a   Yin, Huaxiang ^a   Lee, Eunha ^b   Lee, Jae Chul ^b   Park, Youngsoo ^a  

^a Semiconductor Laboratory   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; AM-OLED; HIGH MOBILITIES; UNDER VOLTAGES;

ELECTRON DEVICES; THIN FILM TRANSISTORS;

THIN FILMS;

EID: 64549161056     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796617     Document Type: Conference Paper

References (3)

1. C. J. Kim et al. IEDM Tech. Dig., pp. 11.6.1-11.6.4, 2005.
2. K. Nomura et al., Nature, Vol 432, pp488, 2004.
3. gs curves of non-passivated GIZO TFTs after various plasma treatments. a bottom gate with