High performance, low temperature solution-processed barium and strontium doped oxide thin film transistors

Chemistry of Materials

Volumn 26, Issue 2, 2014, Pages 1195-1203

  Banger, Kulbinder K ^a   Peterson, Rebecca L ^a   Mori, Kiyotaka ^b   Yamashita, Yoshihisa ^b   Leedham, Timothy ^c   Sirringhaus, Henning ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b PANASONIC CORPORATION   (Japan)

^c Multivalent Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALCOHOLYSIS REACTIONS; HIGH-PERFORMANCE SEMICONDUCTORS; INDIUM GALLIUM ZINC OXIDES; LOW PROCESS TEMPERATURE; METAL ALKOXIDE PRECURSORS; PERFORMANCE STABILITY; PURIFICATION PROTOCOL; THRESHOLD VOLTAGE SHIFTS;

BARIUM; BARIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STABILITY; STRONTIUM; SYNTHESIS (CHEMICAL);

THIN FILM TRANSISTORS;

EID: 84893466470     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm4035837     Document Type: Article

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