Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors

Applied Physics Letters

Volumn 97, Issue 16, 2010, Pages

  Choi, Yuri ^a,b   Kim, Gun Hee ^a   Jeong, Woong Hee ^a   Bae, Jung Hyeon ^a   Kim, Hyun Jae ^a   Hong, Jae Min ^b   Yu, Jae Woong ^c  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; FIELD-EFFECT MOBILITIES; FREE ELECTRON; OFF CURRENT; ON-OFF RATIO; POSITIVE BIAS; SOLUTION-PROCESSED; SUPPRESSING EFFECTS;

FIELD EFFECT TRANSISTORS; OXYGEN; OXYGEN VACANCIES; SCANDIUM; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILM TRANSISTORS;

EID: 77958465070     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3503964     Document Type: Article

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