Comprehensive study on the transport mechanism of amorphous indium-gallium-zinc oxide transistors

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  Jeong, Jae Kyeong ^a   Chung, Hyun Joong ^a   Mo, Yeon Gon ^a   Kim, Hye Dong ^a  

^a Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; FIELD EFFECT TRANSISTORS; GALLIUM; MECHANISMS; OPTICAL DESIGN; OXIDES; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM TRANSISTORS; TRANSISTORS; ZINC; ZINC OXIDE;

APPLICATIONS.; BOTTOM GATE; CHANNEL LENGTHS; CHANNEL MATERIALS; CONDUCTION MECHANISMS; FIELD-EFFECT MOBILITIES; N -CHANNEL; ON/OFF RATIOS; SHORT CHANNELS; SUBTHRESHOLD GATE SWING; TRANSPORT MECHANISMS;

INDIUM;

EID: 52649115830     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2972031     Document Type: Article

References (20)

1. J. H. Lee, W. Nam, B. K. Kim, H. S. Choi, Y. M. Ha, and M. K. Han, IEEE Electron Device Lett., 27, 830 (2006).
2. S. H. Jung, W. J. Nam, and M. K. Han, IEEE Electron Device Lett., 25, 690 (2004).
3. M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, IEEE Trans. Electron Devices, 48, 846 (2001).
4. S. M. Jahinuzzaman, A. Sultana, K. Sakariya, P. Servati, and A. Nathan, Appl. Phys. Lett., 87, 023502 (2005).
5. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London), 432, 488 (2004).
6. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett., 89, 112123 (2006).
7. M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J.-S. Park, J. K. Jeong, Y.-G. Mo, and H. D. Kim, Appl. Phys. Lett., 90, 212114 (2007).
8. J.-S. Park, J. K. Jeong, Y.-G. Mo, H. D. Kim, and S.-I. Kim, Appl. Phys. Lett., 90, 262106 (2007).
9. H. N. Lee, J. W. Kyung, S. K. Kang, D. Y. Kim, M. C. Sung, S. J. Kim, C. N. Kim, H. G. Kim, and S. T. Kim, in Proceedings of IDW, pp. 663-666 (2007).
10. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed., p. 208, John Wiley & Sons, Hoboken, NJ (2006).
11. K. Y. Chan, E. Bunte, H. Stiebig, and D. Knipp, Appl. Phys. Lett., 89, 203509 (2006).
12. J. Zaumseil, K. W. Baldwin, and J. A. Rogers, J. Appl. Phys., 93, 6117 (2003).
13. A. Valletta, L. Mariucci, G. Fortunato, and S. D. Brotherton, Appl. Phys. Lett., 82, 3119 (2003).
14. K. C. Kao and W. Hwang, Electrical Transport in Solids, Chap., and, Pergamon, New York (1981).
15. F. D. Morrison, P. Zubko, D. J. Jung, J. F. Scott, P. Baxter, M. M. Saad, R. M. Bowman, and J. M. Gregg, Appl. Phys. Lett., 86, 152903 (2005).
16. H.-J. Chung, J. H. Jeong, T. K. Ahn, H. J. Lee, M. Kim, K. Jun, J.-S. Park, J. K. Jeong, Y.-G. Mo, and H. D. Kim, Electrochem. Solid-State Lett., 11, H51 (2008).
17. J. G. Simmons, Phys. Rev. Lett., 15, 967 (1965).
18. C. S. Hwang, J. Mater. Res., 16, 3476 (2001).
19. W. K. Choi, L. J. Han, and F. L. Loo, J. Appl. Phys., 81, 276 (1997).
20. P. N. Murgatroyd, J. Phys. D: Appl. Phys., 3, 151 (1970).