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Japanese Journal of Applied Physics

Volumn 53, Issue 4 SPEC. ISSUE, 2014, Pages

Analysis of stability improvement in ZnO thin film transistor with dual-gate structure under negative bias stress

(7) Yun, Ho Jin a Kim, Young Su b Jeong, Kwang Seok a Kim, Yu Mi a Yang, Seung Dong a Lee, Hi Deok a Lee, Ga Won a

a Chungnam National University (South Korea)

b National Nano Fab Center (NNFC) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; METALLIC FILMS; NONVOLATILE STORAGE; THIN FILM TRANSISTORS;

ANALYSIS OF STABILITY; CANCELLATION EFFECTS; DIFFERENT MECHANISMS; ELECTRICAL PARAMETER; ON/OFF CURRENT RATIO; SUB-THRESHOLD SWING(SS); TECHNOLOGY COMPUTER AIDED DESIGN; ZINC OXIDE THIN FILMS;

ZINC OXIDE;

EID: 84903317046 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.53.04EF11 Document Type: Conference Paper

Times cited : (11)

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