The effects of gadolinium incorporation into indium-zinc-oxide thin-film transistors

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 809-811

  Park, Jae Chul ^a   Kim, Sang Wook ^b   Kim, Chang Jung ^b   Lee, Ho Nyeon ^c  

^a Yonsei University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Soonchunhyang University   (South Korea)

Author keywords

Indium; thin film transistors (TFTs); zinc

Indexed keywords

COSPUTTERING; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; IONIC BONDS; ON CURRENTS; RADIO FREQUENCIES; SWITCHING PERFORMANCE; THERMAL-ANNEALING; THIN-FILM TRANSISTOR (TFTS);

INDIUM; THIN FILM TRANSISTORS; ZINC;

GADOLINIUM;

EID: 84861680341     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2192710     Document Type: Article

References (13)

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